Monte Carlo simulation of the effects of vacuum-ultraviolet radiation on dielectric materials

Upadhyaya, G. S.; Shohet, J. L.; Lauer, J. L.

doi:10.1063/1.1879100

Cited by 14 publications

(13 citation statements)

References 13 publications

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“…1,2 This can modify the number of defect states in the dielectric. 3,4 Electron-spin resonance ͑ESR͒ detects those defect states that have paramagnetic electrons. 5,6 Hafnium oxide ͑HfO 2 ͒ is a well-known high-k dielectric material and is a potential gate dielectric for complementary metal oxide semiconductor devices.…”

Section: Effects Of Vacuum Ultraviolet and Ultraviolet Irradiation Onmentioning

confidence: 99%

Effects of vacuum ultraviolet and ultraviolet irradiation on ultrathin hafnium-oxide dielectric layers on (100)Si as measured with electron-spin resonance

Cheng

Nishi

et al. 2010

Applied Physics Letters

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The effects of vacuum ultraviolet (VUV) (7.2 eV) and UV (4.9 eV) irradiation on hafnium-oxide dielectric layers were studied with electron-spin resonance to detect defect states. Silicon dangling-bond defects (Pb centers) and positively charged oxygen vacancies (E′ centers) were detected with g-factor fitting. VUV irradiation increases the level of Pb states, while UV decreases the level of Pb states but increases the level of E′ states significantly. Rapid thermal annealing appears to mitigate these effects. Absolute values of the defect-state concentrations are presented.

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Section: Effects Of Vacuum Ultraviolet and Ultraviolet Irradiation Onmentioning

confidence: 99%

Effects of vacuum ultraviolet and ultraviolet irradiation on ultrathin hafnium-oxide dielectric layers on (100)Si as measured with electron-spin resonance

Cheng

Nishi

et al. 2010

Applied Physics Letters

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“…36 It is plausible that photoinjected electrons generate a drift/diffusion current from the substrate-dielectric interface to the dielectric-vacuum interface, where electrons can be photoemitted. 37,38 Thus, at any given time during VUV irradiation, photoemitted electrons are the result of (1) depopulated electrons from the defect states and (2) photoinjected electrons. Trapped charges from the depopulation of defect states will continue to be created until a steady state is achieved.…”

Section: Charge Trappingmentioning

confidence: 99%

The effects of vacuum ultraviolet radiation on low-k dielectric films

Sinha

Nichols

et al. 2012

Journal of Applied Physics

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Plasmas, known to emit high levels of vacuum ultraviolet (VUV) radiation, are used in the semiconductor industry for processing of low-k organosilicate glass (SiCOH) dielectric device structures. VUV irradiation induces photoconduction, photoemission, and photoinjection. These effects generate trapped charges within the dielectric film, which can degrade electrical properties of the dielectric. The amount of charge accumulation in low-k dielectrics depends on factors that affect photoconduction, photoemission, and photoinjection. Changes in the photo and intrinsic conductivities of SiCOH are also ascribed to the changes in the numbers of charged traps generated during VUV irradiation. The dielectric-substrate interface controls charge trapping by affecting photoinjection of charged carriers into the dielectric from the substrate. The number of trapped charges increases with increasing porosity of SiCOH because of charge trapping sites in the nanopores. Modifications to these three parameters, i.e., (1) VUV induced charge generation, (2) dielectric-substrate interface, and (3) porosity of dielectrics, can be used to reduce trappedcharge accumulation during processing of low-j SiCOH dielectrics. Photons from the plasma are responsible for trapped-charge accumulation within the dielectric, while ions stick primarily to the surface of the dielectrics. In addition, as the dielectric constant was decreased by adding porosity, the defect concentrations increased. V

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“…Radiation damage due to electromagnetic waves is more obvious in some photon energy ranges than in others. In the Vacuum UltraViolet (VUV) wavelength range damage is often encountered [17][18][19][20] and even used as a fabrication method in lithography [21,22]. γ-rays are used as a method to induce cross linking in polymeric systems [23][24][25] or as a biological sterilization method which intrinsically implies radiation damage [26,27].…”

Section: Introductionmentioning

confidence: 99%