Monte Carlo Simulation of the Recombination Contrast of Dislocations

Tabet, Nouar

doi:10.4028/www.scientific.net/ssp.63-64.89

Cited by 3 publications

(7 citation statements)

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“…A good agreement was obtained between the MC simulations and the theoretical models regarding the variation of the contrast versus the electron beam range R e and the carrier lifetime within the dislocation τ D . However, the absolute values of the contrast obtained by simulation were about three times higher than the theoretical ones [13] and have no clear argument that could explain the observed discrepancy. In this study, we have developed a new MC algorithm to simulate the EBIC contrast that results from a three-dimensional generation function.…”

Section: Introductioncontrasting

confidence: 57%

“…The MC algorithm simulates, first, the generation function of the excess carriers as in [11][12][13]. This was achieved by simulating the electron trajectories and the energy loss in the sample.…”

Section: Simulation Algorithmmentioning

confidence: 99%

“…In addition, the first-order approximation describes the excess minority-carrier density within the defect using the linear response whose validity is restricted to the dislocation of sufficiently weak recombination efficiency. The Monte Carlo (MC) simulation is an alternative method that can provide a more realistic analysis of the recombination contrast of extended defects [8][9][10][11][12][13]. In [13], the EBIC contrast of a dislocation normal to the surface was investigated.…”

Section: Introductionmentioning

confidence: 99%

“…The Monte Carlo (MC) simulation is an alternative method that can provide a more realistic analysis of the recombination contrast of extended defects [8][9][10][11][12][13]. In [13], the EBIC contrast of a dislocation normal to the surface was investigated. A good agreement was obtained between the MC simulations and the theoretical models regarding the variation of the contrast versus the electron beam range R e and the carrier lifetime within the dislocation τ D .…”

Section: Introductionmentioning

confidence: 99%

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Monte Carlo simulation of the contrast of SEM charge-collection images of dislocations in semiconductors

Ledra¹,

Tabet²

2005

J. Phys. D: Appl. Phys.

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We describe a Monte Carlo algorithm that we have developed to simulate the electron beam induced current (EBIC) contrast of a surface perpendicular dislocation. The contrast was obtained by simulating the random diffusion and collection of the carriers that are generated at point-like sources S i randomly distributed within the generation volume. The dislocation is described as a cylinder with a radius r D where the minority carrier lifetime (τ D ) is lower than that in the bulk (τ B ).The dependence on the electron range R e of the simulated EBIC contrast profiles, their full width at half maximum (FWHM) and their maximum (C max ) is analysed for a germanium sample. It is shown that with increasing R e , the FWHM of the contrast profile increases steadily in agreement with experiment while the maximum contrast goes through a maximum and converges to zero for R e → 0. The variation of C max upon the diffusion length L D within the dislocation cylinder is analysed too. The results of our simulations show that the values of the contrast obtained by the analytical approach using the first order approximation are underestimated for dislocations of strength exceeding 5.

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Section: Introductioncontrasting

confidence: 57%

Section: Simulation Algorithmmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Monte Carlo simulation of the contrast of SEM charge-collection images of dislocations in semiconductors

Ledra¹,

Tabet²

2005

J. Phys. D: Appl. Phys.

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“…Such modeling was performed, for pure diffusion with constant lifetime and neglecting drift, in Refs. [33][34][35]. However, a direct modeling of a threedimensional random walk is extremely time-consuming, since the particle makes many random steps before it annihilates in the bulk or meets a boundary.…”

Section: (7)mentioning

confidence: 99%

Determination of the Carrier Diffusion Length inGaNfrom Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities

et al. 2019

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We investigate, both theoretically and experimentally, the drift, diffusion, and recombination of excitons in the strain field of an edge threading dislocation intersecting the GaN{0001} surface. We calculate and measure hyperspectral cathodoluminescence maps around the dislocation outcrop for temperatures between 10 to 200 K. Contrary to common belief, the cathodoluminescence intensity contrast is only weakly affected by exciton diffusion, but is caused primarily by exciton dissociation in the piezoelectric field at the dislocation outcrop. Hence, the extension of the dark spots around dislocations in the luminescence maps cannot be used to determine the exciton diffusion length. However, the cathodoluminescence energy contrast, reflecting the local bandgap variation in the dislocation strain field, does sensitively depend on the exciton diffusion length and hence enables its experimental determination. arXiv:1906.05645v1 [cond-mat.mtrl-sci]

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Simulated Contrast of Two Dislocations

Ledra

Hdiy

2019

Semiconductors

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Monte Carlo Simulation of the Recombination Contrast of Dislocations

Cited by 3 publications

References 0 publications

Monte Carlo simulation of the contrast of SEM charge-collection images of dislocations in semiconductors

Monte Carlo simulation of the contrast of SEM charge-collection images of dislocations in semiconductors

Determination of the Carrier Diffusion Length inGaNfrom Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities

Simulated Contrast of Two Dislocations

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