Monte Carlo study of device characteristics of GaN-based avalanche photodiode devices

Zheng, Zhiyuan; Mai, Yuxiang; Wang, Gang

doi:10.1063/1.3176935

Cited by 9 publications

(11 citation statements)

References 37 publications

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“…This shows higher peak drift velocities are obtained at higher field values which are in agreement with the results reported by Zhiyuan Zheng et al [6].…”

Section: Resultssupporting

confidence: 93%

Study of transient response characteristics of electrons in GaN by Monte Carlo method

Ghosal

Biswas

2012

2012 5th International Conference on Computers and Devices for Communication (CODEC)

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The authors have theoretically investigated transient response of electrons in bulk Wurtzite GaN at 300K using one particle monte-carlo method. The relevant lattice scattering mechanisms like deformation potential acoustic phonons, polar optical phonons, impurity and intervalley phonon scatterings are incorporated in the Boltzmann transport equation which is then solved to obtain the transient response characteristics. The transient response characteristics at 300K show that higher peak drift velocities are obtained at higher field values. The velocityfield characteristics for electrons at 300K exhibit a negative differential resistance (NDR) effect.

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“…This shows higher peak drift velocities are obtained at higher field values which are in agreement with the results reported by Zhiyuan Zheng et al [6].…”

Section: Resultssupporting

confidence: 93%

Study of transient response characteristics of electrons in GaN by Monte Carlo method

Ghosal

Biswas

2012

2012 5th International Conference on Computers and Devices for Communication (CODEC)

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“…Electrons transporting within the Γ valley of either GaN or AlN would experience much weaker thermalization. Although the depth of Γ valley is not larger than the ionization threshold energy for electrons (5.3 eV) in GaN 33 , there is a 2-eV CB offset between GaN and AlN 34 . Electrons transporting from GaN to AlN along (0001) direction will return back to the Γ valley of AlN and continue their transport with weak thermalization until their energy rises to higher than 4.0 eV, which is much closer to the ionization threshold energy (5.3 eV).…”

Section: Introductionmentioning

confidence: 88%

A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure

Zheng

Wang

et al. 2016

Applied Physics Letters

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Abstract:Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace the bulky and fragile photomultiplier tubes (PMT) for weak light detection. However, intrinsic limits in semiconductors make the former still inferior to the latter on device performance up to now. In conventional APDs, a large portion of carrier energy drawn from the electric field is thermalized, and the multiplication efficiencies of electron and hole are low and close. In order to achieve high gain, the device has to work under breakdown bias, wherein carrier multiplication proceeds bi-directionally to form a positive feedback multiplication circle. In this case, APDs should work under Geiger mode as a compromise between sustainable detection and high gain. On the other hand, PMT can achieve stable high gain under constant bias (linear mode). Here, we demonstrate an APD works like a PMT, which means it can work under constant bias and holds high gain without breakdown simultaneously. The device is based on a GaN/AlN periodically-stacked-structure (PSS). For the PSS holds the intrinsic features that there are deep Γ valleys and larger band offset in conduction band, electron encountered much less scatterings during transport in PSS APD. Electron holds much higher efficiency than hole to draw energy from the electric field, and avalanche happens uni-directionally with high efficiency. Extremely high ionization coefficient (3.96×10 5 /cm) of electron and large ionization coefficient ratio (over 100) between electron and hole is calculated in the PSS APD by Monte-Carlo simulations and a recorded high gain (10 4 ) tested under constant bias without breakdown is obtained in a prototype device, wherein the stable gain can be determined by the periodicity of the GaN/AlN PSS and no quenching circuits are needed for sustainable detection. This work not only brings a new light into avalanche multiplication mechanism, but also paves a technological path to realize highly sensitive APD working under constant bias like PMT.Keywords: Avalanche photodiode; GaN; Ionization; Periodically stacked structure; Transport Introduction:

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“…Blue and red symbols represent the mean gain characteristics of the devices with the traditional and size-dependent impact ionization coefficients, respectively. The solid lines represent the calculation results obtained with Zheng's MC model, 6) which had been verified by experimental data. From Fig.…”

mentioning

confidence: 53%

“…All the band parameters and scattering parameters are taken from ref. 6, and are relisted in Tables I and II, respectively.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Effect of Wasted Space on Device Characteristics of Nitride-Based Avalanche Photodiodes

Zheng¹,

Chen²,

Xu³

et al. 2011

Jpn. J. Appl. Phys.

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On the basis of our recently proposed theory [Jpn. J. Appl. Phys. 49 (2010) 114101], we report the effect of wasted space on the multiplication gain and excess noise characteristics of GaN-based avalanche photodiodes. By means of the Monte Carlo method, it is shown that with the adoption of the revised impact ionization coefficients, the multiplication gain exhibits an obvious discrepancy compared with conventional theory, and agrees well with that reported for InP. Moreover, the size-dependent impact ionization coefficients affect the noise properties under submicron scale, leading to a new feature different from InP and clarifying the reported experimental data.

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Monte Carlo study of device characteristics of GaN-based avalanche photodiode devices

Cited by 9 publications

References 37 publications

Study of transient response characteristics of electrons in GaN by Monte Carlo method

Study of transient response characteristics of electrons in GaN by Monte Carlo method

A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure

Effect of Wasted Space on Device Characteristics of Nitride-Based Avalanche Photodiodes

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