Monte Carlo study of hot-electron transport in an InGaAs/InAlAs single heterostructure

Kobayashi, E.; Hamaguchi, Chihiro; Matsuoka, Toshimasa; Taniguchi, Kenji

doi:10.1109/16.40921

Cited by 26 publications

(11 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Confined and interface LO phonons are of importance in a quantum-well channel. In InGaAs, InAs-like phonons coexist with GaAs-like phonons; their energies are estimated to be ∼30 meV and ∼36 meV, respectively [3,10]. The joint effect due to the confined and interface modes can be equivalently represented with bulk-like phonons [11].…”

Section: Macroscopic Approachmentioning

confidence: 99%

“…They are not known for the pseudomorphic layer in question. Theoretic estimations [10] suggest that, the time τ sp for the spontaneous emission of an LO phonon by a high-energy electron is nearly independent of the electron energy: the change is less than ±15% in the range hω < ε < 0.4 eV. We shall carry out calculations for several energy-independent values in the range 120 < τ sp < 180 fs.…”

Section: Power Dissipation On Equilibrium Lo Phononsmentioning

confidence: 99%

See 1 more Smart Citation

Hot-phonon lifetime in a modulation-doped AlInAs/GaInAs/AlInAs/InP

Aninkevičius¹,

Matulionis²,

Matulionienė³

2004

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The experimental dependence of microwave noise temperature on supplied electric power is used to study hot phonons in an InP-based modulationdoped In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As heterostructure with a two-dimensional electron gas channel (n 2D = 2.3 × 10 12 cm −2 ). The effective hot-phonon temperature is extracted for two-subband and six-subband models treated in the electron-temperature approximation. The estimated value for the hot-phonon lifetime with respect to the longitudinal optical phonon conversion into other vibration modes is (0.9 ± 0.3) ps at room temperature.

show abstract

Section: Macroscopic Approachmentioning

confidence: 99%

Section: Power Dissipation On Equilibrium Lo Phononsmentioning

confidence: 99%

Hot-phonon lifetime in a modulation-doped AlInAs/GaInAs/AlInAs/InP

Aninkevičius¹,

Matulionis²,

Matulionienė³

2004

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Electron dispersion relations obtained for different semiconductors in the FZBS approach convince anyone that (1) is satisfied not only for GaN but also for several other ZB-semiconductors; for example, for In Ga As [12], [13], InAs [12], [14], and maybe for InP [14]. [Note that dispersion relations presented in graphic form in [12]- [14] do not always allow us to give the exact position of inflection points in the almost linear sections of dispersion curves ( ).]…”

Section: Introductionmentioning

confidence: 58%

Negative effective mass mechanism of negative differential drift velocity and terahertz generation

Gribnikov

Bashirov

Mitin

2001

IEEE J. Select. Topics Quantum Electron.

View full text Add to dashboard Cite

The negative-differential-drift-velocity instability, which forms the basis of Gunn high-frequency generators, can originate from Ridley-Watkins-Hilsum or negative effective mass (NEM) mechanisms. The first mechanism is dissipative by nature. The second is mainly drift-related. Therefore, the second mechanism promises to be more effective. We show the existence of stationary oscillatory regimes in the ballistic NEM p + p p +-diodes, which have a base in the form of a periodic system of parallel p-type quantum-well channels with base length up to 30 nm. An oscillation frequency, which depends on the base length, doping, and spatial period, as well as loads and voltage across the diode, ranges from 1 to 5 THz. We propose an additional combined quantum GaAs-AlGaAsheterostructure, which can be overgrown on a cleaved edge of a specially grown wafer. This structure is intended to obtain electron dispersion relations with NEM sections in the useful energy range of 0.1-0.25 eV.

show abstract

“…Due to phonon interactions, the electrons rapidly scatter into the X and L valleys with scattering rates on the order of 10 13 s −1 . 25 The maximum velocity of electrons in the device is less than 2 × 10 7 cm/s and one period in the device is 35 nm, implying that a continuum electron transits through one period in about 2 × 10 −13 s and is likely to make a transition to the X or L valley in that time. Electrons in the X and L valleys have higher effective masses, and their wavefunctions are poorly phase-matched to the bound energy levels.…”

Section: Theoretical Modelmentioning

confidence: 96%

A comprehensive model of gain recovery due to unipolar electron transport after a short optical pulse in quantum cascade lasers

Mahabadi

Talukder

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

We have developed a comprehensive model of gain recovery due to unipolar electron transport after a short optical pulse in quantum cascade lasers (QCLs) that takes into account all the participating energy levels, including the continuum, in a device. This work takes into account the incoherent scattering of electrons from one energy level to another and quantum coherent tunneling from an injector level to an active region level or vice versa. In contrast to the prior work that only considered transitions to and from a limited number of bound levels, this work include transitions between all bound levels and between the bound energy levels and the continuum. We simulated an experiment of S. Liu et al., in which 438-pJ femtosecond optical pulses at the device's lasing wavelength were injected into an In0.653Ga0.348As/In0.310Al0.690As QCL structure; we found that approximately 1% of the electrons in the bound energy levels will be excited into the continuum by a pulse and that the probability that these electrons will be scattered back into bound energy levels is negligible, ∼10−4. The gain recovery that is predicted is not consistent with the experiments, indicating that one or more phenomena besides unipolar electron transport in response to a short optical pulse play an important role in the observed gain recovery.

show abstract

Monte Carlo study of hot-electron transport in an InGaAs/InAlAs single heterostructure

Cited by 26 publications

References 37 publications

Hot-phonon lifetime in a modulation-doped AlInAs/GaInAs/AlInAs/InP

Hot-phonon lifetime in a modulation-doped AlInAs/GaInAs/AlInAs/InP

Negative effective mass mechanism of negative differential drift velocity and terahertz generation

A comprehensive model of gain recovery due to unipolar electron transport after a short optical pulse in quantum cascade lasers

Contact Info

Product

Resources

About