More Than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs With >230 MW/cm² Power Figure-of-Merit

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

“…Lately, the most advanced nitride HEMTs have achieved initial commercialization up to 650 V. However, with the maturity of device fabrication technology, it has become increasingly difficult to further scaling up the breakdown voltages (V b ) and improving the device reliability at high temperatures. Therefore, in view of the larger bandgap and superior thermal stability of AlGaN over GaN, AlGaN channel devices have been proposed as promising candidate to further improve the performance limits of nitride HEMTs in high-voltage and high-temperature applications [6][7][8][9][10][11][12][13][14][15]. Nanjo Zhang et al fabricated the AlGaN channel HEMTs with a novel ohmic/Schottky-hybrid drain contact, and a record high breakdown voltage of more than 2200 V was obtained for the AlGaN channel HEMTs [11].…”

High-performance AlGaN double channel HEMTs with improved drain current density and high breakdown voltage

“…Lately, the most advanced nitride HEMTs have achieved initial commercialization up to 650 V. However, with the maturity of device fabrication technology, it has become increasingly difficult to further scaling up the breakdown voltages (BV) and improving the device reliability at high temperatures. Therefore, in view of the larger bandgap and superior thermal stability of AlGaN over GaN, AlGaN channel devices have been proposed as promising candidate to further improve the performance limits of nitride HEMTs in high-voltage and high-temperature applications [6][7][8][9][10][11][12][13]. Recently, the successful implementation of AlGaN channel metal-oxidesemiconductor field-effect-transistors (MOSFETs) have also been reported [14].…”

1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V

“…Usually, a single integrated bidirectional blocking device, instead of using a discrete transistor in series with a discrete Schottky barrier diode (SBD), could achieve high blocking voltages under both forward and reverse drain biases, which can obviously reduce the parasitic elements and further improve the power conversion efficiency. Nowadays, the reverse blocking capability of GaN-based power devices are realized by integrating a SBD at drain electrode [12][13][14][15][16][17][18]. It is vital to reduce the forward turn-on voltage (V on ) caused by SBD because the lower V on is helpful to decrease the on-state power loss and thus to improve the overall power efficiency.…”