Morphological, compositional, and geometrical transients of V-groove quantum wires formed during metalorganic vapor-phase epitaxy

Dimastrodonato, V.; Pelucchi, E.; Zestanakis, P.; Vvedensky, Dimitri D.

doi:10.1063/1.4816415

Cited by 6 publications

(12 citation statements)

References 17 publications

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“…(Al)GaAs system, with Ga parameters temperature dependence set identical. 15 An iterative fitting of the free In kinetic parameters, i.e., the energy barriers for the diffusion and incorporation processes and the effective adatom deposition fluxes (Table I), produced good agreement between the model and the experimental data for both the morphological and compositional evolution of the InGaAs layer (hence of the In segregation profile). We take this as an indication of the overall validity of the model when applied to InGaAs systems.…”

Section: A Determination Of Kinetic Parametersmentioning

confidence: 99%

“…The reason for this phenomenon is not clear, but we notice that it holds similarity to what happens in the case of V-groove quantum wires. 15 Considering, for example, the sample shown in Fig. 7, the angle between the vicinal facet (111)A and the base facet (111)B is 77 , and from basic trigonometry, the resulting angle between the lateral facet (111)A and the edge base facet (100) is about 33 , which significantly differs from the 45 angle that characterizes the V-groove.…”

Section: Morphology Of Pyramidal Recessesmentioning

confidence: 99%

“…By comparing with systematic experiments, this model produces quantitative agreement with the observed morphological evolution of the surfaces and the compositional dependence on position for both transient and stationary growth regimes as a function of temperature. [14][15][16] In this work, we extend the model to the simulation of the MOVPE of InGaAs, which is extensively employed as optically active layer in quantum dots and quantum wires. As a first step, the growth of In 0.12 Ga 0.88 As quantum wires is studied to determine a set of optimized kinetic parameters for InGaAs epitaxy that, when used in our model, reproduce the experimental growth evolution.…”

Section: Introductionmentioning

confidence: 99%

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Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates

Moroni

Dimastrodonato

Chung

et al. 2015

Journal of Applied Physics

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We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model-based on a set of coupled reaction-diffusion equations, one for each facet in the systemaccounts for the facet-dependence of all kinetic processes (e.g., precursor decomposition, adatom diffusion, and adatom lifetimes) and has been previously applied to account for the temperature-, concentration-, and temporal-dependence of AlGaAs nanostructures on GaAs (111)B surfaces with V-grooves and pyramidal recesses. In the present study, the growth of In 0.12 Ga 0.88 As quantum wires at the bottom of V-grooves is used to determine a set of optimized kinetic parameters. Based on these parameters, we have modeled the growth of In 0.25 Ga 0.75 As nanostructures formed in pyramidal site-controlled quantum-dot systems, successfully producing a qualitative explanation for the temperature-dependence of their optical properties, which have been reported in previous studies. Finally, we present scanning electron and cross-sectional atomic force microscopy images which show previously unreported facetting at the bottom of the pyramidal recesses that allow quantum dot formation. V C 2015 AIP Publishing LLC.[http://dx

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Section: A Determination Of Kinetic Parametersmentioning

confidence: 99%

Section: Morphology Of Pyramidal Recessesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates

Moroni

Dimastrodonato

Chung

et al. 2015

Journal of Applied Physics

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“…In Ref. [67] facet angle with respect to the growth direction) which appeared as a puzzle to the scientific community, was indeed a simple consequence of the model and the difference in growth rate between the bottom and top (100) surfaces. These results are based on the AlGaAs/GaAs system.…”

Section: Nominalga Contentmentioning

confidence: 98%

Self-ordered nanostructures on patterned substrates

Pelucchi

Moroni

Dimastrodonato

et al. 2017

J Mater Sci: Mater Electron

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The formation of nanostructures during metalorganic vapor-phase epitaxy on patterned (001)/(111)B GaAs substrates is reviewed. The focus of this review is on the seminal experiments that revealed the key kinetic processes during nanostructure formation and the theory and modelling that explained the phenomenology in successively greater detail. Experiments have demonstrated that V-groove quantum wires and pyramidal quantum dots result from self-limiting concentration profiles that develop at the bottom of V-grooves and inverted pyramids, respectively. In the 1950s, long before the practical importance of patterned substrates became evident, the mechanisms of capillarity during the equilibration of non-planar surfaces were identified and characterized. This was followed, from the late 1980s by the identification of growth rate anisotropies (i.e. differential growth rates of crystallographic facets) and precursor decomposition anisotropies, with parallel developments in the fabrication of V-groove quantum wires and pyramidal quantum dots. The modelling of these growth processes began at the scale of facets and culminated in systems of coupled reaction-diffusion equations, one for each crystallographic facet that defines the pattern, which takes account of the decomposition and surface diffusion kinetics of the group-III precursors and the subsequent surface diffusion and incorporation of the group-III atoms released by these precursors. Solutions of the equations with optimized parameters produced concentration profiles that provided a quantitative interpretation of the time-, temperature-, and alloy-concentration dependence of the self-ordering process seen in experiments.

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“…We defined the InGaN layer located at the apex of the structure as a QWR and the lateral width of the QWR as the bottom length of the trapezoidal shape. Figure 1c shows our control of the lateral width of a single QWR on a 3D structure by using a self-limited growth mechanism, by which the evolution of the surface profile is limited when reaching a thermodynamically steady-state, allowing us to control the morphology and size of the quantum structure [22][23][24] . In convex growth mode, a faster growth rate at the apex than that at the nearby crystal facet is essential to achieving a finite width under this growth mechanism 24 .…”

Section: Strong and Robust Polarization Anisotropy Of Siteand Size-comentioning

confidence: 99%

Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

Yeo

Lee

Sim

et al. 2020

Sci Rep

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Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.

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Morphological, compositional, and geometrical transients of V-groove quantum wires formed during metalorganic vapor-phase epitaxy

Abstract: Original citationDimastrodonato, V., Pelucchi, E., Zestanakis, P. A. and Vvedensky, D.

Cited by 6 publications

References 17 publications

Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates

Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates

Self-ordered nanostructures on patterned substrates

Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

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