Morphological instability in epitaxially strained dislocation-free solid films

Spencer, Brian; Voorhees, Peter W.; Davis, Stephen H.

doi:10.1103/physrevlett.67.3696

Cited by 431 publications

(286 citation statements)

References 16 publications

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“…42 We anticipate substantial stain be retained in our film deposited at 350℃ since it was deposited at a lower temperature, which favors greater critical thickness. 43,44 In addition, strain is generally expected in films many times thicker than the critical thickness. 44,45 EuS films 200 monolayer thick exhibits strain induced lattice expansion and contraction.…”

Section: Resultsmentioning

confidence: 99%

Sign of the superexchange coupling between next-nearest neighbors in EuO

et al. 2012

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Section: Resultsmentioning

confidence: 99%

Sign of the superexchange coupling between next-nearest neighbors in EuO

et al. 2012

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“…This destabilizing effect is the same as that in the classical stress-driven morphology instability. [6][7][8][9][10] The step line energy, which gives the term −1 in the coefficient of k 2 2 inside the brackets in the dispersion relation, and the force dipole interaction, which gives the terms containing ␣ 1 in the dispersion relation, are both stabilizing. The additional nonlinear terms due to the misfit force monopole interaction give the two terms containing ␣ 3 in the dispersion relation, which modify the instability.…”

Section: Linear Instabilitymentioning

confidence: 99%

“…[1][2][3][4] Many continuum models can be found in the literature on the surface morphological evolution under elastic effects, in which the surfaces are modeled as continuously changed profiles without any discrete structures on them. 2,[5][6][7][8][9][10][11][12][13][14][15][16] The stress in the solid is a destabilizing factor while the surface energy is a stabilizing one, and the planar surface of a stressed solid is unstable for perturbations with wave numbers less than a critical value. [6][7][8][9][10] These models work in the regime above the roughening transition temperature.…”

Section: Introductionmentioning

confidence: 99%

Continuum model for the long-range elastic interaction on stepped epitaxial surfaces in2+1dimensions

Zhu

Xiang

2009

Phys. Rev. B

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In heteroepitaxy, the mismatch of lattice constants between the crystal film and the substrate causes misfit strain and stress in the bulk of the film, driving the surface of the film to self-organize into various nanostructures. Below the roughening transition temperature, an epitaxial surface consists of facets and steps and changes its morphology by lateral motion of steps. In this paper, we present a 2 + 1-dimensional continuum model for the long-range elastic interaction on stepped surface of a strained film. The continuum model is derived rigorously from the discrete model for the interaction between steps; thus it incorporates the discrete features of the stepped surfaces. Examples show that our continuum model is much more accurate as an approximation to the discrete model than the traditional continuum approximation. Moreover, in the linear instability of a planar surface, our continuum model gives the transition from step bunching instability to step undulation instability as the distance between adjacent steps increases, which agrees with the experimental observations and the results of discrete models and is missing using the traditional continuum approximation. Numerical simulations of the surface evolution using our model in the nonlinear regime show several different surface morphologies, including the morphology of step bunching which cannot be obtained using the traditional continuum approximation.

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14] SAQDs are the result of a transition from 2D growth to 3D growth in strained epitaxial films such as Si x Ge 1Àx =Si and In x Ga 1Àx As/GaAs: This process is known as Stranski-Krastanow growth or VolmerWebber growth. 3,[15][16][17] In applications, order of SAQDs is a key factor. There are two types of order, spatial and size.…”

Section: Introductionmentioning

confidence: 99%

Predicting and Understanding Order of Heteroepitaxial Quantum Dots

Friedman

2007

Journal of Elec Materi

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Heteroepitaxial self-assembled quantum dots (SAQDs) will allow breakthroughs in electronics and optoelectronics. SAQDs are a result of Stranski-Krastanow growth, whereby a growing planar film becomes unstable after an initial wetting layer is formed. Common systems are Ge x Si 1Àx =Si and In x Ga 1Àx As/GaAs: For applications, SAQD arrays need to be ordered. The roles of crystal anisotropy, random initial conditions and thermal fluctuations in influencing SAQD order during early stages of SAQD formation are studied through a simple stochastic model of surface diffusion. Surface diffusion is analyzed through a linear and perturbatively non-linear analysis. The role of crystal anisotropy in enhancing SAQD order is elucidated. It is also found that SAQD order is enhanced when the deposited film is allowed to evolve at heights near the critical wetting surface height that marks the onset of non-planar film growth.

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Morphological instability in epitaxially strained dislocation-free solid films

Cited by 431 publications

References 16 publications

Sign of the superexchange coupling between next-nearest neighbors in EuO

Sign of the superexchange coupling between next-nearest neighbors in EuO

Continuum model for the long-range elastic interaction on stepped epitaxial surfaces in2+1dimensions

Predicting and Understanding Order of Heteroepitaxial Quantum Dots

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