MOS capacitors characterization under illumination

López, Diana; Monsieur, F.

doi:10.1109/icmel.2008.4559353

Cited by 8 publications

(7 citation statements)

References 5 publications

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“…The same oxide as in Figure 2 has been investigated using 600x600 ^m NiAu electrodes illuminated by a 20 mV laser, (wavelength 632.8 nm), leading to the macroscopic C-V of Figure 3. The creation of minority carriers which modify the capacity in depletion and inversion is evident in this figure and corresponds to the observations of reference [12].…”

Section: Influence Of the Lasersupporting

confidence: 89%

Nanoscale Characterization Of Ultra-Thin Dielectrics Using Scanning Capacitance Microscopy

Ligor¹,

Gautier²,

Descamps³

et al. 2009

AIP Conference Proceedings

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Abstract. In this communication, Scanning Capacitance Spectroscopy (SCS) is used in order to characterize the electrical properties of thin dielectrics. The aim is to determine the best experimental conditions that lead to a reliable interpretation of SCS and to the best signal to noise ratio, with the objective of measuring the characteristics of the oxide (charges in the oxide, flat band voltage...). Comparisons are made with macroscopic C-V curves obtained with an impedance analyzer to test the reliability of the results obtained by SCS. In particular, we study the role of the AFM laser and tip-sample contact on the shape of the SCS (width, additional peaks...) and show that they introduce parasitic features which are not present in macroscopic C-V curves. This leads to a difficult interpretation of SCS results, especially in the case where characteristic parameters of the oxide are to be extracted from SCS analysis.

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Section: Influence Of the Lasersupporting

confidence: 89%

Nanoscale Characterization Of Ultra-Thin Dielectrics Using Scanning Capacitance Microscopy

Ligor¹,

Gautier²,

Descamps³

et al. 2009

AIP Conference Proceedings

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“…As shown in Figure , both the two cells behave photoinduced positively charged inversion layer near the n-Si/oxide interface under 0 V applied gate bias, and holes are repelled out to the ITO layer. As for n-Si/TiO x /ITO cell, a clear light-driven transition from depletion to inversion can be observed in the capacitance–voltage characteristics, which is due to the decreased time constant for minority carrier generation and thinner SCR region under illumination, indicating a lateral transport of charges within the inversion layer. , It is not the same case with n-Si/ITO cell, in which the amount of charge is sustained and then decreased to a low value under high forward bias. The interfacial states in the n-Si/ITO cell may act as a blocking center, resisting the charge transport over very long distances (Figure S5b).…”

Section: Resultsmentioning

confidence: 93%

Manipulating the Interfacial Energetics of n-type Silicon Photoanode for Efficient Water Oxidation

Yao¹,

et al. 2016

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The photoanodes with heterojunction behavior could enable the development of solar energy conversion, but their performance largely suffers from the poor charge separation and transport process through the multiple interfacial energy levels involved. The question is how to efficiently manipulate these energy levels. Taking the n-Si Schottky photoanode as a prototype, the undesired donor-like interfacial defects and its adverse effects on charge transfer in n-Si/ITO photoanode are well recognized and diminished through the treatment on electronic energy level. The obtained n-Si/TiO/ITO Schottky junction exhibits a highly efficient charge transport and a barrier height of 0.95 eV, which is close to the theoretical optimum for n-Si/ITO Schottky contact. Then, the holes extraction can be further facilitated through the variation of surface energy level, with the NiOOH coated ITO layer. This is confirmed by a 115% increase in surface photovoltage of the photoanodes. Eventually, an unprecedentedly low onset potential of 0.9 V (vs RHE) is realized for water oxidation among n-Si photoanodes. For the water oxidation reaction, the n-Si/TiO/ITO/NiOOH photoanode presents a charge separation efficiency up to 100% and an injection efficiency greater than 90% at a wide voltage range. This work identifies the important role of interfacial energetics played in photoelectrochemical conversion.

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“…Conventional photocapacitive devices like Schottky diodes [1,2] work only on change in trap occupancy in the space charge region under illumination, which is usually small. Demonstrated MOS photocapacitors [3][4][5] use the modulation of inversion layer under illumination. We propose a novel design, which utilizes the physical mechanisms changing both active and imaginary device impedance (i.e.…”

Section: Introductionmentioning

confidence: 99%

Tunable and Wireless Photoimpedance Light Sensor

et al. 2014

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We report on the effects of the frequency dispersion in light sensitive materials used in photoimpedance wireless sensors. An example of such a sensor is a gated semiconductor connecting two or more fixed capacitances. The impedance of the device under illumination is changed by the change in the photoresistance of the semiconductor layer and the change in the gate-semiconductor capacitance. We report on the design and simulation of the frequency dispersion of the impedance of this device in silicon and discuss the physics and device performance. We also evaluate the dynamic range and sensitivity of the wireless photoimpedance sensors and show their advantages for wireless sensing applications compared to more conventional light sensors.

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MOS capacitors characterization under illumination

Cited by 8 publications

References 5 publications

Nanoscale Characterization Of Ultra-Thin Dielectrics Using Scanning Capacitance Microscopy

Nanoscale Characterization Of Ultra-Thin Dielectrics Using Scanning Capacitance Microscopy

Manipulating the Interfacial Energetics of n-type Silicon Photoanode for Efficient Water Oxidation

Tunable and Wireless Photoimpedance Light Sensor

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