MOS Compatibility of high-conductivity TaSi<sub>2</sub>/n<sup>+</sup>poly-Si gates

Sinha, A. K.; Lindenberger, W.S.; Fraser, D. B.; Murarka, S. P.; Fuls, E.N.

doi:10.1109/t-ed.1980.20051

Cited by 55 publications

(5 citation statements)

References 7 publications

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“…It is seen that the poly-Si-to-silicide etch rate ratio is about 3-4, leading to silicide roof formation. A similar overhang was reported (43) for the PPE in CF4/O~ of cosputtered TaSi.z on doped poly-Si.…”

Section: { supporting

confidence: 80%

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Plasma Etching of Refractory Gates for VLSI Applications

Chow

Steckl

1984

J. Electrochem. Soc.

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The present status of plasma etching of refractory gates is reviewed in the context of high resolution patterning. Etching of various refractory metals (cf. Mo, W) and metal silicides (cf. MoSi2 , WSi2 , TaSi2 ) is particularly emphasized and discussed in terms of etch rate, anisotropy, etch selectivity over SiO2 , resist, and other thin film materials. Key issues addressed include choice of etchant (cf. CF4 , NF3 , CCl4 ), additive gas ( O2 , Ar, He), and reactor configuration (planar plasma, RIE, flexible diode, triode). Factors influencing the control of edge profiles in single‐level and composite gate structures are described. End‐point detection of these plasma processes is reviewed and compared with that developed for silicon etching. Also, basic mechanisms in these processes, such as desorption of reaction products, are discussed with respect to their effect on the etching characteristics of these refractory materials.

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Section: { supporting

confidence: 80%

“…Both fluorinated and chlorinated gases as well as their mixtures have been studied. A similar table for silicides is shown in Table II (36)(37)(38)(39)(40)(41)(42)(43)(44)(45)(46)(47)(48)(49)(50)(51)(52)(53). As is well known in silicon etching, one of the fundamental differences between * Electrochemical Society Active Member.…”

Section: General Considerationsmentioning

confidence: 96%

Plasma Etching of Refractory Gates for VLSI Applications

Chow

Steckl

1984

J. Electrochem. Soc.

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“…5 selectively to a thin gate oxide. The difficulty in etching polycide has been reported (5,6). The probelm is to etch the top layer of silicide and then poly-Si without a significant loss of definition by overetching the silicide or undercutting the poly-Si.…”

Section: Polycide Etchingmentioning

confidence: 99%

One‐Micron Polycide (WSi2 on Poly‐Si) MOSFET Technology

Tsai

Chao

Ephrath

et al. 1981

J. Electrochem. Soc.

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An n‐channel single level polycide ( WSi2 on poly‐Si), 22.5 nm gate oxide technology, using electron‐beam direct writing for lithography with minimum feature size of 1 μm, has been developed to fabricate NMOS circuits. Low resistance false(2.7 normalΩ/□false) polycide interconnections and small dimension (1 μm) devices are the unique features of this process. The overall process is described in this paper. Polycide deposition, annealing, etching, and oxidation are discussed in detail. Cross sections (0.5K to 2K) of polycide dynamic RAM arrays have been successfully fabricated by this polycide technology. The advantage of using low resistance polycide in integrated circuits is demonstrated.

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“…It is known that Mo can be etched using F and CI containing gases such as CF 4 /0 2 (I-5), NF 3 (6), CCI 4 /0 2 (7,8), and SF 6 /0 2 (9). However, very little work has been reported for the Mo etching mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Reactive Ion Etching of Molybdenum In CF₄/O₂ Plasma

et al. 1986

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A mechanistic study of Mo etching in a CF/0 2 plasma has been performed using optical emission spectroscopy , mass spectrometry and x-ray photoelectron spectroscopy. Etching characteristics of Mo for a wide range of conditions relevant to plasma processing are also reported. Addition of small amount of 02 to the CF 4 plasma dramatically increases the Mo etch rates, as well as concentrations of 0 and F in plasma. However, further addition of 02 above 50 % leads to decrease in etch rates. Two types of neutral molybdenum oxifluorides and a trace amount of molybdenum hexafluoride were observed in the effluent gas. Comparing the etch rates with the concentration changes of F and 0 with and without Mo present in plasma, it is suggested that Mo is chemically etched by F and 0. Atomic oxygen enhances the etch rate by increasing the F concentration in the plasma as well as by removing a carbon layer forming desorbed CO on the surface. XPS and AES analysis results for the etched surface inferred that chemisorbed fluorocarbon radicals dissociate into carbon and fluorine atoms, which in turn form a passivating graphite-like layer and a volatile molybdenum oxifluoride and molybdenum hexafluoride layer.

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MOS Compatibility of high-conductivity TaSi₂/n⁺poly-Si gates

Cited by 55 publications

References 7 publications

Plasma Etching of Refractory Gates for VLSI Applications

Plasma Etching of Refractory Gates for VLSI Applications

One‐Micron Polycide (WSi2 on Poly‐Si) MOSFET Technology

Reactive Ion Etching of Molybdenum In CF₄/O₂ Plasma

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MOS Compatibility of high-conductivity TaSi2/n+poly-Si gates

Cited by 55 publications

References 7 publications

Plasma Etching of Refractory Gates for VLSI Applications

Plasma Etching of Refractory Gates for VLSI Applications

One‐Micron Polycide (WSi2 on Poly‐Si) MOSFET Technology

Reactive Ion Etching of Molybdenum In CF4/O2 Plasma

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Product

Resources

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MOS Compatibility of high-conductivity TaSi₂/n⁺poly-Si gates

Reactive Ion Etching of Molybdenum In CF₄/O₂ Plasma