Movable high-Q nanoresonators realized by semiconductor nanowires on a Si photonic crystal platform

Birowosuto, Muhammad Danang; Yokoo, Akihiko; Zhang, G.; Tateno, Kouta; Kuramochi, Eiichi; Taniyama, Hideaki; Takiguchi, Masato; Notomi, Masaya

doi:10.1038/nmat3873

Cited by 106 publications

(122 citation statements)

References 46 publications

Supporting

Mentioning

118

Contrasting

Order By: Relevance

“…This means that a suitable design for the nanowire and PhC cavity can allow a substantial reduction of the lasing threshold of the nanowire and also raise the spontaneous emission factor to~0.3, which is a typical number for nanolasers [52]. The group of Notomi at Nippon Telegraph and Telephone (NTT) in Japan managed recently to show the Purcell effect in a single InAsP nanowire on top of an Si photonic crystal, but no lasing was observed [12].…”

Section: (D) External Cavity Engineeringmentioning

confidence: 99%

See 1 more Smart Citation

Nanowire Lasers

et al. 2015

View full text Add to dashboard Cite

Abstract:We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs), solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione-dimensional (1D) nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, and wavelength tunability. Next, we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers in many applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

show abstract

Section: (D) External Cavity Engineeringmentioning

confidence: 99%

“…This leads to much simpler and stronger light-matter coupling; however, individual nanowires must be placed one by one in the cavity [11,12]. This approach was very recently investigated at NTT in Japan.…”

Section: (D) External Cavity Engineeringmentioning

confidence: 99%

Nanowire Lasers

et al. 2015

View full text Add to dashboard Cite

show abstract

“…Semiconductor nanowires form an important building block for nanophotonic devices, as their growth is well controlled using a variety of top-down and bottom-up techniques [1,2]. The quasi-one dimensional geometry of a nanowire enables their use as antennas and cavities for light [3][4][5][6][7][8][9][10], and offers many advantages for applications such as photodetectors [11][12][13][14][15], solar cells [16][17][18], and single photon sources [19]. Optimization of such devices requires knowledge of the nanostructured materials at a more fundamental level.…”

Section: Introductionmentioning

confidence: 99%

Antenna resonances in low aspect ratio semiconductor nanowires

et al. 2015

View full text Add to dashboard Cite

We present numerical simulations of low aspect ratio gallium phosphide nanowires under plane wave illumination, which reveal the interplay between transverse and longitudinal antenna-like resonances. A comparison to the limiting case of the semiconducting sphere shows a gradual, continuous transition of resonant electric and magnetic spherical Mie modes into Fabry-Pérot cavity modes with mixed electric and magnetic characteristics. As the length of the nanowires further increases, these finite-wire modes converge towards the leaky-mode resonances of an infinite cylindrical wire. Furthermore, we report a large and selective enhancement or suppression of electric and magnetic field in structures comprising two semiconducting nanowires. For an interparticle separation of 20 nm, we observe up to 300-fold enhancement in the electric field intensity and an almost complete quenching of the magnetic field in specific mode configurations. Angle-dependent extinction spectra highlight the importance of symmetry and phase matching in the excitation of cavity modes and show the limited validity of the infinite wire approximation for describing the response of finite length nanowires toward glancing angles.

show abstract

“…1,2 The most recent studies have shown that bent nanowires or nanobelts can exhibit novel optical and electrical properties compared with their unbent counterparts, thus appreciably widening their potential applications in optoelectronic systems because optoelectronic characteristics in lowdimensional materials are particularly sensitive to crystallinity and electronic structures. 3 For example, in the photoluminescence spectra of bending wurtzite micro/nanowires, a red shift of the near-band energy induced by deformation has been shown to have a linear relation between the peak shift and the strain gradient.…”

Section: Introductionmentioning

confidence: 99%

Polar-surface-driven growth of ZnS microsprings with novel optoelectronic properties

Zhang

Cong

et al. 2015

NPG Asia Mater

View full text Add to dashboard Cite

Small perturbations during the growth kinetics of low-dimensional semiconductor structures may lead to novel features, which may provide an ideal system for understanding the fundamental physics of optical phenomena in optoelectronics devices. In this study, we report deformation-free single-crystal zinc sulfide (ZnS) microsprings produced by a polar-surface-driven growth process, and we thoroughly investigate the electrical characteristics of individual ZnS microsprings under electron beam irradiation and their initial applications in ultraviolet (UV) light sensors and waveguides. The microsprings produced are formed by a block-by-block stacking process following a hexagonal screw model that does not introduce distortion into the crystal lattices. The first photodetectors designed based on a single ZnS microspring exhibit a high spectral selectivity combined with a high photosensitivity and a fast response time (o0.3 s) under 320-nm illumination, which make ZnS microsprings particularly valuable as UV-light sensors. Concurrently, excellent waveguide performance along the fiber of a single ZnS microspring (for example,~0.13 dB μm − 1 at 450 nm, and~0.17 dB μm − 1 at 520 nm) is demonstrated for the first time. The high crystal quality, the fast response to UV light and the low propagation loss exhibited by ZnS microsprings indicate that they have important potential applications in nano-optoelectronic systems. NPG Asia Materials (2015) 7, e213; doi:10.1038/am.2015.100; published online 4 September 2015 INTRODUCTIONOne-dimensional semiconductor structures provide new opportunities to exploit the chemical and physical properties of materials at the micro-and nano-scales, making them promising candidates for future optoelectronic devices that take advantage of the well-controlled size, morphology and geometries of these materials. 1,2 The most recent studies have shown that bent nanowires or nanobelts can exhibit novel optical and electrical properties compared with their unbent counterparts, thus appreciably widening their potential applications in optoelectronic systems because optoelectronic characteristics in lowdimensional materials are particularly sensitive to crystallinity and electronic structures. 3 For example, in the photoluminescence spectra of bending wurtzite micro/nanowires, a red shift of the near-band energy induced by deformation has been shown to have a linear relation between the peak shift and the strain gradient. 4 Because the peaks of the photoluminescence spectra are near the band gap of these materials, such a linear correlation between the band gap and strain gradient could provide an alternative method in optoelectronics, such as enhanced photodetectors. 5 Conversely, from both scientific and practical viewpoints, one-dimensional structures are ideal materials to measure the optical gains of miniaturized lasers and light amplification due to their strong ability to confine electrons, holes and photons.

show abstract

Movable high-Q nanoresonators realized by semiconductor nanowires on a Si photonic crystal platform

Cited by 106 publications

References 46 publications

Nanowire Lasers

Nanowire Lasers

Antenna resonances in low aspect ratio semiconductor nanowires

Polar-surface-driven growth of ZnS microsprings with novel optoelectronic properties

Contact Info

Product

Resources

About