MOVPE growth and Mg doping of InxGa1−xN (x∼0.4) for solar cell

Horie, Masahiro; Sugita, Kenichiro; Hashimoto, Akihiro; Yamamoto, Akio

doi:10.1016/j.solmat.2008.11.031

Cited by 26 publications

(21 citation statements)

References 3 publications

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“…Since the InGaN grown on a GaN buffer has a higher density of defects that are propagated from the poor quality GaN buffer, most of the Mg atoms seem to be incorporated in the high density of defects. As reported previously, phase separation was caused by the Mg doping of InGaN with an In composition of 0.37 [5]. In this work, on the other hand, the Mg-doped InGaN sample with an In content of 0.35 shows no phase separation.…”

Section: Resultssupporting

confidence: 72%

“…However, it is also a big challenge to achieve p-type conduction for such films. Several groups [3][4][5][6][7] have studied Mg doping of InGaN. Chang et al [3] reported MOVPE growth and Mg doping of InGaN with In composition from 0.13 to 0.82.…”

Section: Introductionmentioning

confidence: 99%

“…However, the p-type samples with In content of 0.32-0.56 showed a broad or double-peak X-ray diffraction 2y/o pattern, indicating their low crystalline quality and/or large In-composition fluctuation. Horie et al [5] reported that the phase separation of InGaN with In composition of 0.37 was caused by Mg doping. Islam et al [6] reported that a high Mg doping level was needed to achieve p-type conduction for InGaN with a high In composition.…”

Section: Introductionmentioning

confidence: 99%

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MOVPE growth of high quality p-type InGaN with intermediate In compositions

Sasamoto

Hotta

Sugita

et al. 2011

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 72%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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MOVPE growth of high quality p-type InGaN with intermediate In compositions

Sasamoto

Hotta

Sugita

et al. 2011

Journal of Crystal Growth

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“…The followings are the details of our InGaN homojunction cell research [15,17,18]. Figure 7 shows the growth temperature dependence of In content in MOVPE InGaN films grown with a different TMI/(TMI+TEG) molar ratio.…”

Section: Potential and Status Of Ingan And Inaln Solar Cellsmentioning

confidence: 99%

“…Since a GaN and InN with a carrier concentration in the range of 5x10 17 -5x10 18 cm -3 can be grown using the same reactor, such high residual donors in InGa(Al)N are due to structural defects in the films. We have to develop technologies to significantly reduce structural defects, mainly misfit dislocations.…”

mentioning

confidence: 99%

Recent advances in InN‐based solar cells: status and challenges in InGaN and InAlN solar cells

Yamamoto

Islam

Kang

et al. 2010

Phys. Status Solidi (c)

123

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In this paper, we review and discuss the recent advances in InN‐based solar cells. Before the discussion on InN‐based solar cells, two major losses in a solar cell, transparency loss and excess excitation loss, are explained and the effectiveness of a multi‐junction tandem cell in reducing the both losses simultaneously is described. Then, the status and issues for multi‐junction tandem solar cells using the conventional III‐V materials (InGaP/InGaAs systems) are reviewed briefly in order to understand the advantages of InN‐based material as a multi‐junction solar cell material. It is shown that main problem in the conventional III‐V multi‐junction solar cell is the current mismatching between sub‐cells, which reduces significantly the conversion efficiency of the tandem cells. The main advantage of InGaN and InAlN as a multi‐junction solar cell is that a wanted band‐gap between 0.7 and 2.5 eV is realized by changing only their composition.This means that current matching between sub‐cells will be easily achieved using InGaN and InAlN systems. After the status of InGaN solar cell research is summarized, the results on the MOVPE growth of InGaN with an In content up to 0.4, Mg doping using Cp2Mg, and the formation of an n+‐p homo‐junction are described. The insertion of step‐graded InxGa1‐xN interlayer between the GaN and InGaN epilayer is also shown to be effective to improve the epilayer quality. The study on InAlN solar cell is on the stage of the growth of In‐rich InAlN. Single‐crystalline InAlN films with an Al content from 0 (Eg = 0.7 eV) to 0.43 (2 eV) have been successfully grown by employing atmospheric‐pressure MOVPE. The study on Mg‐doping for InAlN will be the next step. Finally, we will summarize and discuss the challenges in InGaN and InAlN solar cells. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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