MOVPE growth of visible vertical-cavity surface-emitting lasers (VCSELs)

Zorn, M.; Knigge, Andrea; Zeimer, U.; Klein, Andreas; Kissel, H.; Weyers, M.; Tränkle, G.

doi:10.1016/s0022-0248(02)01860-2

Cited by 15 publications

(9 citation statements)

References 29 publications

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“…Opto-electronic devices emitting in the visible wavelength range like light emitting diodes (LED) [1], edge-emitting lasers (EEL) [2,3] and vertical-cavity surface-emitting lasers (VCSEL) [4] usually apply (Al x Ga 1Àx ) 1Ày In y P lattice matched to GaAs as optically active material or as barrier material for GaInP quantum wells. Therefore, controlling the aluminium composition x (band gap) and indium content y (lattice matching for y ¼ 0.484) is highly desired during growth in metal-organic vapour phase epitaxy (MOVPE) to ensure high crystalline quality and reproducible device properties.…”

Section: Introductionmentioning

confidence: 99%

AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices

Zorn

Trepk²,

Schenk³

et al. 2007

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices

Zorn

Trepk²,

Schenk³

et al. 2007

Journal of Crystal Growth

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“…More details on the growth process and the final performance of the VCSEL devices can be found in Refs. [20] and [21].…”

Section: Monitoring Of Complete Growth Processesmentioning

confidence: 99%

Development and control of MOVPE growth processes for devices using reflectance anisotropy spectroscopy and normalized reflectance

Zorn

Zettler²

2005

Physica Status Solidi (b)

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The use of the optical in situ techniques reflectance anisotropy (RA) and normalized reflectance (NR) for metal-organic vapour-phase epitaxy (MOVPE) growth processes of compound semiconductor devices is reviewed. The RA signal detects small deviations in the doping profile during growth of hetero-bipolar transistors and correlates to the emission wavelength of edge-emitting laser structure via its sensitivity to the quantum well composition. The NR signal is crucial for the alignment of distributed Bragg reflectors (DBR) in vertical-cavity surface-emitting lasers. With simultaneously performed RA and NR measurements the doping profile as well as the DBR alignment can be determined in situ. The composition monitoring in quaternary InGaAsP grown on InP is demonstrated using the RA signal for the As : P ratio while the NR signal is used for the Ga : In ratio. For AlGaInP on GaAs the NR signal is sensitive to both the aluminium and the indium content. Therefore these effects have to be separated via the determination of the growth efficiency of the respective materials using the growth rate calculated from the NR signal.

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“…This device was fabricated using a proton implant process. Several improvements to the red VCSEL structure, including the use of carbon doping in the mirror, graded interfaces in the mirror, separate confinement structure in the active region, an oxide aperture, and the removal of the GaAs contact layer from the aperture resulted in the demonstration of room temperature peak output power of 4 mW at 650 nm and 10 mW at 670 nm [5,6]. Johnson and Hibbs-Brenner reported an output power of 11.5 mW at 673 nm at room temperature [7].…”

Section: Introductionmentioning

confidence: 99%

Advances in Red VCSEL Technology

Johnson

Hibbs‐Brenner

Hogan

et al. 2012

Advances in Optical Technologies

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Red VCSELs offer the benefits of improved performance and lower power consumption for medical and industrial sensing, faster printing and scanning, and lower cost, higher speed interconnects based upon plastic optical fiber (POF). However, materials challenges make it more difficult to achieve the desired performance than at the well-developed wavelength of 850 nm. This paper will describe the state of the art of red VCSEL performance and the results of development efforts to achieve improved output power and a broader temperature range of operation. It will also provide examples of the applications of red VCSELs and the benefits they offer. In addition, the packaging flexibility offered by VCSELs, and some examples of non-Hermetic package demonstrations will be discussed. Some of the red VCSEL performance demonstrations include output power of 14 mW CW at room temperature, a record maximum temperature of 115• C for CW operation at an emission wavelength of 689 nm, time to 1% failure at room temperature of approximately 200,000 hours, lifetime in a 50• C, 85% humidity environment in excess of 3500 hours, digital data rate of 3 Gbps, and peak pulsed array power of greater than 100 mW.

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MOVPE growth of visible vertical-cavity surface-emitting lasers (VCSELs)

Cited by 15 publications

References 29 publications

AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices

AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices

Development and control of MOVPE growth processes for devices using reflectance anisotropy spectroscopy and normalized reflectance

Advances in Red VCSEL Technology

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