MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-substrates

Ludewig, Peter; Reinhard, S.; Jandieri, K.; Wegele, T.; Beyer, Andreas; Tapfer, L.; Volz, Kerstin; Stolz, W.

doi:10.1016/j.jcrysgro.2015.12.024

Cited by 21 publications

(11 citation statements)

References 26 publications

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“…Nearly lattice-matched hetero-epitaxy (e.g., GaP on Si [4][5][6]) or pseudomorphic growth [7,8] is important but will not be discussed here. We focus on the growth performed on (001) oriented Si, rather than those on (111) Si (e.g., the vapor-liquid-solid growth method), for compatibility with the mainstream complementary-metal-oxide-semiconductor (CMOS) technology.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Lau

2017

Progress in Crystal Growth and Characterization of Materials

125

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Please note: Changes made as a result of publishing processes such as copy-editing, formatting and page numbers may not be reflected in this version. For the definitive version of this publication, please refer to the published source. You are advised to consult the publisher's version if you wish to cite this paper.This version is being made available in accordance with publisher policies. See http://orca.cf.ac.uk/policies.html for usage policies. Copyright and moral rights for publications made available in ORCA are retained by the copyright holders. U N C O R R E C T E D P R O O F ARTICLE INFO ABSTRACTMonolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.

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Section: Introductionmentioning

confidence: 99%

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Lau

2017

Progress in Crystal Growth and Characterization of Materials

125

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“…Owing to the challenges in pseudomorphic heterostructure growth arising from compressive mismatch of many III–V materials with commercially available substrates, the B-V compounds have received attention for their potential application in heterostructure strain engineering. To date, dilute-boride alloys have been shown to effectively reduce compressive strain through alloying with InGaAs , and GaAsBi for solar cell devices and InGaAs , for quantum well optical sources on GaAs and to compensate highly compressively strained quantum well optical sources on GaP-on-Si virtual substrates. , In analogy to dilute-nitride III–V alloys, the large tensile mismatch of B-V compounds with conventional substrates provides new avenues for compensation of compressively strained layers using III–V alloys incorporating relatively small amounts of B. However, despite predictions of increased solid solubility of B over N in analogous highly mismatched nitride alloys, reports of high-quality B x Ga 1– x As alloys have thus far remained limited to dilute concentrations, limiting their ultimate application for strain engineering.…”

Section: Introductionmentioning

confidence: 99%

Kinetically Limited Molecular Beam Epitaxy of B_xGa_1–xAs Alloys

McNicholas

El-Jaroudi

Bank

2021

Crystal Growth & Design

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The small lattice constants of the boron pnictides present exciting new opportunities for strain engineering and lattice-matching of III–V semiconductor heterostructures. However, the challenging synthesis of boron-containing III–V alloys has limited the achievable B concentrations to only dilute amounts, hindering both the ultimate application of these materials and experimental investigations of their electronic and optical properties. Using B x Ga1–x As on GaAs and GaP substrates as prototype, we demonstrate a highly kinetically limited molecular beam epitaxy growth regime capable of achieving high substitutional incorporation of boron. By combining the effects of low growth temperature and surfactant-mediated epitaxy with the high boron fluxes accessible with electron-beam evaporation, we achieved substitutional boron incorporation up to a 15% mole fraction, nearly double that of previous reports.

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“…Therefore, the GaNAsP-based materials are very promising for the monolithic integration of optoelectronic devices on Si-based platform. Indeed, substantial progress has been made in the development of GaNAsP-based photovoltaic cells and lasers monolithically grown on Si-based platform [61][62][63][64][65][66][67]. Although the growth of dilute materials on Si is an emerging field in terms of monolithic integration, the physics and growth are quite different from III-V (GaAs and InP), thereby the growth of dilute materials on Si is excluded in this review.…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial Growth of III-V Semiconductors on Silicon

et al. 2020

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Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs), since it provides enormous potential benefits, including versatile functionality, low-cost, large-area production, and dense integration. However, the material dissimilarity between III-V and Si, such as lattice constant, coefficient of thermal expansion, and polarity, introduces a high density of various defects during the growth of III-V on Si. In order to tackle these issues, a variety of growth techniques have been developed so far, leading to the demonstration of high-quality III-V materials and optoelectronic devices monolithically grown on various Si-based platform. In this paper, the recent advances in the heteroepitaxial growth of III-V on Si substrates, particularly GaAs and InP, are discussed. After introducing the fundamental and technical challenges for III-V-on-Si heteroepitaxy, we discuss recent approaches for resolving growth issues and future direction towards monolithic integration of III-V on Si platform.

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MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-substrates

Cited by 21 publications

References 26 publications

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Kinetically Limited Molecular Beam Epitaxy of B_xGa_1–xAs Alloys

Heteroepitaxial Growth of III-V Semiconductors on Silicon

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MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-substrates

Cited by 21 publications

References 26 publications

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Kinetically Limited Molecular Beam Epitaxy of BxGa1–xAs Alloys

Heteroepitaxial Growth of III-V Semiconductors on Silicon

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Kinetically Limited Molecular Beam Epitaxy of B_xGa_1–xAs Alloys