MOVPE of AlGaInP/GaInP heterostructures for visible lasers

Roentgen, P.; Heuberger, W.; Bona, G.L.; Unger, Peter

doi:10.1016/0022-0248(91)90549-k

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Introduction1

A Iii-v Materials For Light Emission and High-speed Electro1

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1992

1995

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Cited by 21 publications

(2 citation statements)

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“…Such materials are used for the fabrication of a diverse range of optoelectronic devices (solid state lasers, LED's) [1,4,5,6,7] operating in the visible range. The understanding of phosphorus-stabilized GaAs surfaces is of prime importance in both the realization of high quality InGaP/GaAs and AIGaInP/GaAs heterostructures and the modeling of their electronic properties.…”

Section: Introductionmentioning

confidence: 99%

Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface

1993

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Section: Introductionmentioning

confidence: 99%

Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface

1993

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“…High doping levels are required in laser structures in order to achieve low series resistance in the cladding regions. Both Mg and Zn have been extensively studied in this application [71], [72]. The higher growth temperatures desired for the growth of high A1 content (Al,Gal-,)o,52Ino,48P lead to rapidly decreasing incorporation of both Mg and Zn due to their high elemental vapor pressures.…”

Section: A Iii-v Materials For Light Emission and High-speed Electromentioning

confidence: 99%