MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires

Sladek, Kamil; Klinger, V.; Wensorra, Jakob; Akabori, Masashi; Hardtdegen, H.; Grützmacher, Detlev

doi:10.1016/j.jcrysgro.2009.11.026

Cited by 43 publications

(40 citation statements)

References 14 publications

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“…Radially modulated semiconductor heterostructures, realized from core-(multi)shell nanowires (CSNWs), [1][2][3][4][5] offer new perspectives in quantum electronics. 6 Several crucial steps have been taken toward the realization of high-mobility devices based on this new class of nano-materials and their integration.…”

Section: Introductionmentioning

confidence: 99%

“…15 Surface states of the outer GaAs layer, which lie about the midgap energy, easily deplete the outer layers of the structure, and an electron gas may form at the inner GaAs/AlGaAs hetero-interface. 4 Such radial modulation-doped heterojunctions can host a high-mobility electron gas, similarly to high-mobility two-dimensional electron gases (2DEGs), but wrapped around the core.…”

Section: Introductionmentioning

confidence: 99%

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Landau levels, edge states, and magnetoconductance in GaAs/AlGaAs core-shell nanowires

2013

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Magnetic states of the electron gas confined in modulation-doped core-shell nanowires are calculated for a transverse field of arbitrary strength and orientation. Magneto-conductance is predicted within the Landauer approach. The modeling takes fully into account the radial material modulation, the prismatic symmetry and the doping profile of realistic GaAs/AlGaAs devices within an envelope-function approach, and electron-electron interaction is included in a mean-field selfconsistent approach. Calculations show that in the low free-carrier density regime, magnetic states can be described in terms of Landau levels and edge states, similar to planar two-dimensional electron gases in a Hall bar. However, at higher carrier density the dominating electron-electron interaction leads to a strongly inhomogeneous localization at the prismatic heterointerface. This gives rise to a complex band dispersion, with local minima at finite values of the longitudinal wave vector, and a region of negative magneto-resistance. The predicted marked anisotropy of the magneto-conductance with field direction is a direct probe of the inhomogeneous electron gas localization of the conductive channel induced by the prismatic geometry.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Landau levels, edge states, and magnetoconductance in GaAs/AlGaAs core-shell nanowires

2013

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“…An elegant solution of this problem is to epitaxially coat the nanowire by a shell semiconductor with a higher energy band gap. [3][4][5][6][7][8][9][10] Here, AlGaAs is the perfectly suitable shell material as it supplies charge carriers to the GaAs core by modulation doping [10][11][12] as well as preserves the carriers from the direct influence of the surface defects without additionally introduced strain due to the lattice matching between GaAs and AlGaAs.…”

mentioning

confidence: 99%

“…10 First, GaAs nanowires were grown at 750 C on a GaAs (111)B substrate by selective area metal-organic vapor phase epitaxy using trimethylgallium and arsine (AsH 3 ) as precursors in an N 2 ambient. Subsequently, the GaAs nanowires were covered by conformal overgrowth of Al 0.3 Ga 0.7 As and GaAs at 690 C, using triethylgallium and dimethylethylamin alane.…”

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confidence: 99%

Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires

Wirths

Mikulics

Heintzmann

et al. 2012

Applied Physics Letters

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Ohmic contacts to GaAs/AlGaAs core/shell nanowires are prepared by using a Ni/AuGe/Ni/Au layer system. In contrast to Ohmic contacts to planar GaAs/AlGaAs layer systems here, relatively low alloying temperatures are used in cylindrical geometry. Lowest resistances are found for annealing temperatures of 320 °C and 340 °C. For annealing temperatures exceeding 360 °C, the nanowires degraded completely. Nanowires annealed under optimized conditions preserved their Ohmic characteristics even down to temperatures of 4 K.

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“…After baking, the temperature was ramped down to the seeding layer growth temperature. Then, TBA was flowed at 1.97×10 1 . Finally, a thin AlGaAs passivation shell was grown at 600 °C, followed by a thin GaAs cap to prevent the oxidation of Al.…”

Section: B Experimental Development Of Gaas-nps On Silicon (111) Submentioning

confidence: 99%

Nanopillar Photonic Crystal Lasers for Tb/s Transceivers on Silicon

Huffaker¹

2015

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MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires

Cited by 43 publications

References 14 publications

Landau levels, edge states, and magnetoconductance in GaAs/AlGaAs core-shell nanowires

Landau levels, edge states, and magnetoconductance in GaAs/AlGaAs core-shell nanowires

Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires

Nanopillar Photonic Crystal Lasers for Tb/s Transceivers on Silicon

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