Much improved flat interfaces of InGaAs∕AlAsSb quantum well structures grown on (411)A InP substrates by molecular-beam epitaxy

Abstract

Interface roughness characterization by electron mobility of pseudomorphic In 0.74 Ga 0.26 As ∕ In 0.52 Al 0.48 As modulation-doped quantum wells grown on (411)A InP substrates by molecular beam epitaxy Extremely high electron mobility of pseudomorphic In 0.74 Ga 0.26 As ∕ In 0.46 Al 0.54 As modulation-doped quantum wells grown on ( 411 ) A InP substrates by molecular-beam epitaxy Appl. Phys. Lett. 85, 4043 (2004); 10.1063/1.1807023Super-flat interfaces in pseudomorphic In 0.72 Ga 0.28 As/In 0.52 Al 0.48 As quantum wells grown on (411)A InP substrates by molecular beam epitaxy In 0.18 Ga 0.82 As/GaAs 1−y P y quantum wells grown on (n11) A GaAs substrates by molecular beam epitaxy Larger critical thickness determined by photoluminescence measurements in pseudomorphic In 0.25 Ga 0.75 As/Al 0.32 Ga 0.68 As quantum well grown on (411)A GaAs substrates by molecular beam epitaxy In 0.53 Ga 0.47 As/ AlAs 0.56 Sb 0.44 quantum well ͑QW͒ structures were grown on a ͑411͒A oriented InP substrate by molecular-beam epitaxy ͑MBE͒. Photoluminescence ͑PL͒ spectra at 12 K indicated that interface flatness of a 2.4 nm thick In 0.53 Ga 0.47 As QWs on the ͑411͒A InP substrate, which can be utilized for 1.55 m range all-optical-switching devices using intersubband transition ͑ISBT͒, is much superior to that of QWs simultaneously grown on a conventional ͑100͒ InP substrate over the whole range of the growth temperature ͑T s = 480-570°C͒. The best value of full width at half-maximum of a PL peak ͑12 K͒ from the 2.4 nm thick In 0.53 Ga 0.47 As/ AlAs 0.56 Sb 0.44 QW grown on the ͑411͒A InP substrate at 570°C was 36 meV, which is much smaller than the best value previously reported ͑58 meV͒ for similar ͑100͒ In 0.53 Ga 0.47 As/ AlAs 0.56 Sb 0.44 QWs. This result indicates that MBE growth of In 0.53 Ga 0.47 As/ AlAs 0.56 Sb 0.44 QWs on the ͑411͒A InP substrate significantly improves their interface flatness and 1.55 m range In 0.53 Ga 0.47 As/ AlAs 0.56 Sb 0.44 ISBT devices fabricated on the ͑411͒A InP substrate are expected to provide much better performance.

Shape transition in InAs nanostructures formed by Stranski-Krastanow growth mode on InP (001) substrate

“…This low value agrees with the high stability of the (114)A InAs surfaces observed experimentally. 24 Nevertheless, it could lead to an instability of the (001) InAs surface which is not observed experimentally. In the following, we chose c (114)A ¼ 44.5 meV/A 2 , within the accuracy range of the DFT result, but preserving the stability of InAs(001).…”