Multi-bias Small Signal Circuit Model for FinFET Transistors

Wang, Fang; Wu, Yunqiu; Li, Jun; Zhao, Chenxi; Liu, Huihua; Yu, Yiming; Kang, Kai

doi:10.1109/rfit.2019.8929152

Cited by 6 publications

(1 citation statement)

References 11 publications

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“…The authors did not provide detailed parameter extraction methods, however these models are suitable for 2-D planar MOSFETs. Wang et al [22] reported the FinFET model for RF application, it provided a method for extracting model parameters for the range of 200 MHz to 50 GHz. Most of reported model describe the behavior of DC characteristics.…”

Section: Introductionmentioning

confidence: 99%

An Efficient Technique to Simulate the AC/DC Parameters of Trigate FinFETs

Memon,

Rehman,

Bashir

et al. 2024

IEEE Access

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This paper discusses the alternating-current (AC) and direct-current (DC) characteristics of Trigate FinFETs. A modified non linear DC model is proposed to predict I − V characteristics with effect of an efficient technique for the extraction of AC small signal parameters. The extraction of small signal parameters using S-measurements can be developed on advance design system (ADS) software which is based on the electrical behavior of the device. It examines the electrical response as it depends on bias voltages and the extrinsic and intrinsic parameters of Si FinFETs. The approaches discussed here are valid over a range of frequency starting from few Hz up to several tens of GHz. In this paper equivalent circuit procedure has been adopted to compute device AC parameters based on its measured AC response. The characteristics were then simulated by developing a Matlab code based on particle swam optimization (PSO) technique and compared with technology computer aided design (TCAD) data. The results shows that the good agreement are achieved between simulated and TCAD data.

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Section: Introductionmentioning

confidence: 99%

An Efficient Technique to Simulate the AC/DC Parameters of Trigate FinFETs

Memon,

Rehman,

Bashir

et al. 2024

IEEE Access

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RF MOSFETs

Kumari,

Gupta,

Saxena

2024

Encyclopedia of RF and Microwave Engineering

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In this article, the RF performance of different MOSFET architectures such as Silicon‐On‐Insulator (SOI), Lightly Doped Drain (LDD) MOSFET, Graphene FET, and Negative Capacitance (NC) FET have been reported based on the previously reported work in the form of equivalent circuits. Using the data reported in the literature, the cutoff frequency and maximum frequency of oscillation have been summarized with varying channel lengths. Compared results show that multigate architecture results in higher cutoff frequency and a maximum frequency of oscillation, which can be further increased by decreasing the channel length of the MOSFET architecture. However, the deterioration in the resulting device gain at lower channel length has also been reported. Furthermore, the performance of SOI, Silicon‐on‐Nothing (SON), Double Gate (DG), Double‐Gate Silicon‐On‐Insulator (DGSOI), and Empty Space in Double‐Gate (ESDG) architectures have been explored using ATLAS TCAD software tool for RF and digital parameters investigation. The various parameters explored in this article are current density, electric field, breakdown voltage, impact ionization rate, scattering parameters, noise conductance, minimum noise figure, and cross‐correlation factor. The presented results show that, for the same drain current value, ESDG architecture has higher device gain compared to other devices used for comparison along with higher cutoff frequency. However, this higher device gain comes at the cost of a slightly higher minimum noise figure but with improved noise conductance and cross‐correlation factor (slightly higher than DG). Thus, ESDG is a reliable candidate for LNA design compared to other devices.

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An 84K-295K Small Signal Circuit Model for Fin Field Effect Transistor

Chi

et al. 2022

2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-A

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Multi-bias Small Signal Circuit Model for FinFET Transistors

Cited by 6 publications

References 11 publications

An Efficient Technique to Simulate the AC/DC Parameters of Trigate FinFETs

An Efficient Technique to Simulate the AC/DC Parameters of Trigate FinFETs

RF MOSFETs

An 84K-295K Small Signal Circuit Model for Fin Field Effect Transistor

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