Multi-component high-K gate dielectrics for the silicon industry

Electrical and dielectrical properties of tantalum oxide films grown by Nd:YAG laser assisted oxidation

“…Fig. 2(a) [3]. The oxide thicknesses being~22.5 nm, 32.5 nm and 41.5 nm for initial 10, 15 and 20 nm thick Ta films are in agreement with the expectation of approximately twice that of initial Ta film thickness.…”

“…Therefore, there has been a great demand lately for alternative gate dielectrics [1][2][3]. Among the high-κ materials like ZrO 2 , HfO 2 , Ta 2 O 5 , Y 2 O 3 , TiO 2 metal oxides, Ta 2 O 5 is one of the most promising candidates to replace SiO 2 as a memory dielectric in storage capacitors, since it has excellent step coverage characteristics, high dielectric constant greater than 20 (depending on the conditions during growth), high breakdown field, relatively low leakage currents resulting in a high storage charges and chemically stable structure [2][3][4][5][6][7].…”

Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts

“…The oxide/GaAs interface is well known to have a high density of interface states, which has thwarted development of a metal-oxide-semiconductor transistor technology 19 . Similarly, Al 2 O 3 /Si interfaces formed by sputter or electron beam deposition of the oxide exhibit large interface state densities 28 , which may contribute to the large Hanle signals recently measured for NiFe/Al 2 O 3 /Si three-terminal devices 11 these values were about two orders of magnitude larger than that predicted by theory.…”

Growth of HfO2 by Liquid Injection MOCVD and ALD Using New Hafnium‐Cyclopentadienyl Precursors

“…The b-diketonates, [Hf(thd) 4 ] (thd = 2,2,6,6,-tetramethyl-3,5-heptanedionate), [8] [Hf(tod) 4 ] (tod = 2,7,7-trimethyl-3,5-octanedionate), [8] and [Hf(tmnd) 4 ] [9] have been investigated, but they also require relatively high growth temperatures, and oxide films deposited from b-diketonates are often contaminated with carbon. Although the nitrate complex [Hf(NO 3 ) 4 ] has been used for the MOCVD of high-purity HfO 2 films, [10,11] concerns about the stability of anhydrous metal nitrates may restrict its application. Since the initial studies by Bastianini et al [12] 4 ] have been extensively investigated, [2,[13][14][15][16] but they are highly airand moisture-sensitive, making them difficult to handle and use, especially in solution-based liquid injection MOCVD applications.…”