Two-dimensional materials such as graphene show great potential for future nanoscale electronic devices. The high surface-to-volume ratio is a natural asset for applications such as chemical sensing, where perturbations to the surface resulting in charge redistribution are readily manifested in the transport characteristics. Here we show that single monolayer MoS(2) functions effectively as a chemical sensor, exhibiting highly selective reactivity to a range of analytes and providing sensitive transduction of transient surface physisorption events to the conductance of the monolayer channel. We find strong response upon exposure to triethylamine, a decomposition product of the V-series nerve gas agents. We discuss these results in the context of analyte/sensor interaction in which the analyte serves as either an electron donor or acceptor, producing a temporary charge perturbation of the sensor material. We find highly selective response to electron donors and little response to electron acceptors, consistent with the weak n-type character of our MoS(2). The MoS(2) sensor exhibits a much higher selectivity than carbon nanotube-based sensors.

We report on the epitaxial growth of a group-IV ferromagnetic semiconductor, Mn(x)Ge(1-x), in which the Curie temperature is found to increase linearly with manganese (Mn) concentration from 25 to 116 kelvin. The p-type semiconducting character and hole-mediated exchange permit control of ferromagnetic order through application of a +/-0.5-volt gate voltage, a value compatible with present microelectronic technology. Total-energy calculations within density-functional theory show that the magnetically ordered phase arises from a long-range ferromagnetic interaction that dominates a short-range antiferromagnetic interaction. Calculated spin interactions and percolation theory predict transition temperatures larger than measured, consistent with the observed suppression of magnetically active Mn atoms and hole concentration.

Topological insulators exhibit metallic surface states populated by massless Dirac fermions with spin-momentum locking, where the carrier spin lies in-plane, locked at right angles to the carrier momentum. Here, we show that a charge current produces a net spin polarization via spin-momentum locking in Bi2Se3 films, and this polarization is directly manifested as a voltage on a ferromagnetic contact. This voltage is proportional to the projection of the spin polarization onto the contact magnetization, is determined by the direction and magnitude of the charge current, scales inversely with Bi2Se3 film thickness, and its sign is that expected from spin-momentum locking rather than Rashba effects. Similar data are obtained for two different ferromagnetic contacts, demonstrating that these behaviours are independent of the details of the ferromagnetic contact. These results demonstrate direct electrical access to the topological insulators' surface-state spin system and enable utilization of its remarkable properties for future technological applications.

We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature.The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine, emitting circularly polarized light, and the quantum selection rules relating the optical and carrier spin polarizations provide a quantitative, model-independent measure of injection efficiency.This demonstrates that spin injecting contacts can be formed using a widely employed contact methodology, providing a ready pathway for the integration of spin transport into semiconductor processing technology.Revised for Applied Physics Letters 12/17/01

Submitted for the MAR13 Meeting of The American Physical Society Valley polarization and intervalley scattering in monolayer MoS 2 G. KIOSEOGLOU, University of Crete, A.T. HANBICKI, M. CURRIE, A.L. FRIEDMAN, D. GUNLYCKE, B.T. JONKER, Naval Research Lab-Single layer MoS 2 is a prime candidate material for implementing valleytronics because minima in the bandstructure at inequivalent K points of the Brillouin zone can be independently populated, thus making the valley index a potential state variable for information processing. Light of a particular helicity populates only one of the two K-valleys (either K or K') resulting in a strong emission at around 1.9 eV associated with a direct transition. We use energy and helicity dependent optical pumping to analyze the coupling of the valley and spin indices to the depolarization of emitted light. The circular polarization of the photoluminescence is very high for photoexcitation near the bandgap, and has a power-law decrease as the photo-excitation energy increases. We identify phonon-assisted intervalley scattering as the primary spin relaxation mechanism and present a model of depolarization that explains the wide variation in values for the optical polarization reported in the literature. Our results elucidate the basic processes that control the unique properties of this material and should help to realize future valleytronic applications. This work was supported by core programs at NRL and the NRL Nanoscience Institute.