We report on the epitaxial growth of a group-IV ferromagnetic semiconductor, Mn(x)Ge(1-x), in which the Curie temperature is found to increase linearly with manganese (Mn) concentration from 25 to 116 kelvin. The p-type semiconducting character and hole-mediated exchange permit control of ferromagnetic order through application of a +/-0.5-volt gate voltage, a value compatible with present microelectronic technology. Total-energy calculations within density-functional theory show that the magnetically ordered phase arises from a long-range ferromagnetic interaction that dominates a short-range antiferromagnetic interaction. Calculated spin interactions and percolation theory predict transition temperatures larger than measured, consistent with the observed suppression of magnetically active Mn atoms and hole concentration.

We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature.The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine, emitting circularly polarized light, and the quantum selection rules relating the optical and carrier spin polarizations provide a quantitative, model-independent measure of injection efficiency.This demonstrates that spin injecting contacts can be formed using a widely employed contact methodology, providing a ready pathway for the integration of spin transport into semiconductor processing technology.Revised for Applied Physics Letters 12/17/01

Submitted for the MAR13 Meeting of The American Physical Society Valley polarization and intervalley scattering in monolayer MoS 2 G. KIOSEOGLOU, University of Crete, A.T. HANBICKI, M. CURRIE, A.L. FRIEDMAN, D. GUNLYCKE, B.T. JONKER, Naval Research Lab-Single layer MoS 2 is a prime candidate material for implementing valleytronics because minima in the bandstructure at inequivalent K points of the Brillouin zone can be independently populated, thus making the valley index a potential state variable for information processing. Light of a particular helicity populates only one of the two K-valleys (either K or K') resulting in a strong emission at around 1.9 eV associated with a direct transition. We use energy and helicity dependent optical pumping to analyze the coupling of the valley and spin indices to the depolarization of emitted light. The circular polarization of the photoluminescence is very high for photoexcitation near the bandgap, and has a power-law decrease as the photo-excitation energy increases. We identify phonon-assisted intervalley scattering as the primary spin relaxation mechanism and present a model of depolarization that explains the wide variation in values for the optical polarization reported in the literature. Our results elucidate the basic processes that control the unique properties of this material and should help to realize future valleytronic applications. This work was supported by core programs at NRL and the NRL Nanoscience Institute.

The electron's spin angular momentum is one of several alternative state variables under consideration on the International Technology Roadmap for Semiconductors (ITRS) for processing information in the fundamentally new ways that will be required beyond the ultimate scaling limits of silicon-based complementary metal-oxide-semiconductor technology 1 . Electrical injection/transport of spin-polarized carriers is prerequisite for developing such an approach 2,3 . Although significant progress has been realized in GaAs (ref. 4), little progress has been made in Si, despite its overwhelming dominance of the semiconductor industry. Here, we report successful injection of spin-polarized electrons from an iron film through an Al 2 O 3 tunnel barrier into Si(001). The circular polarization of the electroluminescence resulting from radiative recombination in Si and in GaAs (in Si/AlGaAs/GaAs structures) tracks the Fe magnetization, confirming that these spin-polarized electrons originate from the Fe contact. The polarization reflects Fe majority spin. We determine a lower bound for the Si electron spin polarization of 10%, and obtain an estimate of ∼30% at 5 K, with significant polarization extending to at least 125 K. We further demonstrate spin transport across the Si/AlGaAs interface.The manipulation of carrier spin angular momentum in semiconductors offers enhanced functionality and a new paradigm for device operation 2-4 . Recent calculations 5 indicate that spinbased field-effect transistors can exhibit lower leakage currents and switching energies than those projected for end-of-roadmap complementary metal-oxide-semiconductor devices, significantly reducing heat dissipation, which has been identified as one of the grand challenges facing scaled complementary metal-oxidesemiconductors 1 . Several fundamental properties of Si make it an ideal host for spin-based functionality. Spin-orbit effects producing spin relaxation are much smaller in Si than in GaAs owing to the lower atomic mass and the inversion symmetry of the crystal structure itself. The dominant naturally occurring isotope, Si 28 , has no nuclear spin, suppressing hyperfine interactions. Consequently, spin lifetimes are expected to be relatively long, as demonstrated by electron paramagnetic resonance work on donor-bound electrons 6 and more recent work on free electrons in Si (refs 7,8). In addition, silicon's mature technology base and overwhelming dominance of the semiconductor industry make it an obvious choice for implementing spin-based functionality. Several spin-based Si devices have indeed been proposed, including transistor structures 9,10 and elements for application in quantum computation/information technology 11 .Despite these advantages, efficient electrical spin injection and transport in Si have yet to be demonstrated. Here, we electrically inject spin-polarized electrons from a thin ferromagnetic Fe film through an Al 2 O 3 tunnel barrier into a Si(001) n−i−p doped heterostructure, and observe circular polarization of the electrolumin...

Electron spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single step tunneling is the dominant transport mechanism. The current-voltage data show a clear zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like longitudinal-optical phonon modes of the AlGaAs barrier, providing further evidence for tunneling. These results provide experimental confirmation of several theoretical analyses indicating that tunneling enables significant spin injection from a metal into a semiconductor.