Multi-Gb/s graded-index POF data link with butt-coupled single-mode InGaAs VCSEL

Mederer, F.; Jäger, R.; Schnitzer, P.; Unold, H.J.; Kicherer, M.; Ebeling, Karl Joachim; Naritomi, M.; Yoshida, Rie

doi:10.1109/68.823516

Cited by 19 publications

(3 citation statements)

References 5 publications

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“…Dramatic improvements in vertical-cavity surfaceemitting laser (VCSEL) performance have been obtained due to advances in fabrication techniques for optical and electrical confinement, as well as in the design of quantum well structures and the growth of Bragg mirrors. Nowadays, VCSELs with small diameter (less than 20 μm) and low output power have been widely used in optical communications, scanning, and massive parallel optical interconnections [1][2][3]. The applications in solid-state laser pumping, numerous medical applications, high-resolution printing, and free-space optical data communication are revealing a growing market for high-power diode lasers [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Design and characterization of a nonuniform linear vertical-cavity surface-emitting laser array with a Gaussian far-field distribution

et al. 2009

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A 980 nm bottom-emitting vertical-cavity surface-emitting laser array with a nonuniform linear arrangement is reported to realize emission with a Gaussian far-field distribution. This array is composed of five symmetrically arranged elements of 200 microm, 150 microm, and 100 microm diameter, with center spacing of 300 microm and 250 microm, respectively. An output power of 880 mW with a high power density of 1 kW/cm2 is obtained. The divergence angle is below 20 degrees in the range of operating current from 0 A to 6 A. The theoretical simulation of the near-field and the far-field distribution is in good agreement with the experimental result. The comparison between this nonuniform linear array, the single device, and the conventional two-dimensional array is carried out to demonstrate the good performance of the linear array.

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Section: Introductionmentioning

confidence: 99%

Design and characterization of a nonuniform linear vertical-cavity surface-emitting laser array with a Gaussian far-field distribution

et al. 2009

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“…Gigabit Ethernet and Fibre Channel), first using 850 nm radiation (first-generation optical-fibre system), and next using 1300 nm and 1550 nm radiation (second-and thirdgeneration optical-fibre systems) [1]. But there is an emerging new application in communication networks taking advantage of plastic (polymer) optical fibres (POFs) [2][3][4][5][6][7]. POFs of much larger core than silica fibres exhibit additionally great mechanical flexibility which can dramatically reduce the costs of their installation as office and home networks and especially in cars, planes and ships.…”

Section: Introductionmentioning

confidence: 99%

Self-consistent model of 650 nm GaInP/AlGaInP quantum-well vertical-cavity surface-emitting diode lasers

Piskorski

Sarzała

Nakwaski

2007

Semicond. Sci. Technol.

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A comprehensive fully self-consistent model of oxide-confined GaAs-based vertical-cavity surface-emitting diode lasers (VCSELs) with GaInP/AlGaInP quantum-well active regions to simulate their room-temperature (RT) continuous-wave (CW) operation is presented. The model takes into consideration all observed or expected special features of GaInP/AlGaInP VCSELs. A complete set of model parameters is given. The model enables a deeper understanding of a VCSEL operation with full complexity of many inter-related physical phenomena taking place within its volume. It may also be used to design and optimize the above VCSEL structures for their numerous applications, in particular as sources of the 650 nm carrier wave in communication systems using plastic optical fibres. With the aid of this model, anticipated VCSEL RT CW performance characteristics may be determined.

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“…Due to the attractive features of the vertical emitting geometry, vertical-cavity surface-emitting lasers (VCSELs) have shown many advantages over conventional edge-emitting lasers, such as a circular light-output mode, a high packing density for two-dimensional arrays and single longitudinal mode emission due to the inherent short cavity length [1][2][3]. In particular, the AlAs oxide confinement technology is so successfully used in device fabrication that VCSEL devices have been used in many applications [4].…”

Section: Introductionmentioning

confidence: 99%

A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics

Yan¹,

Qin²,

Zhang³

et al. 2004

Semicond. Sci. Technol.

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A high power bottom-emitting InGaAs/GaAsP vertical-cavity surface-emitting laser with a large aperture (400 µm diameter) is described. The device has been fabricated by using oxidation confinement technology. The device threshold current is 610 mA, and the maximum output power is up to the watt regime (1.42 W) at room temperature (24 • C) with a pulse condition (pulse width of 50 µs, repetition rate of 1 kHz). The maximum continuous wave optical output power at room temperature is as high as 1.09 W. The lasing peak wavelength is 987 nm, the full width at half-maximum is 0.9 nm, and the far-field divergence angle is below 10 •. The temperature characteristics of the device are also obtained. A special temperature dependence of the threshold current in the vertical-cavity surface-emitting laser structure is observed; the characteristic temperature T 0 is over 220 K, and the wavelength shift with temperature is only about 0.06 nm K −1 .

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Multi-Gb/s graded-index POF data link with butt-coupled single-mode InGaAs VCSEL

Cited by 19 publications

References 5 publications

Design and characterization of a nonuniform linear vertical-cavity surface-emitting laser array with a Gaussian far-field distribution

Design and characterization of a nonuniform linear vertical-cavity surface-emitting laser array with a Gaussian far-field distribution

Self-consistent model of 650 nm GaInP/AlGaInP quantum-well vertical-cavity surface-emitting diode lasers

A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics

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