Multi-junction III–V solar cells: current status and future potential

Yamaguchi, Masafumi; Takamoto, Tatsuya; Araki, Kiyomichi; Ekins-Daukes, N. J.

doi:10.1016/j.solener.2004.09.018

Cited by 368 publications

(155 citation statements)

References 7 publications

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“…The group V halides all have relatively low boiling or sublimation temperatures (table 4), but the temperatures for the fluorides are lower than those of the other halides. PF 3 , PF 5 , and NF 3 are especially volatile, evaporating well below room temperature. Thus, even though chlorine species may be primarily responsible for etching, fluorine atoms may contribute to the etch process, particularly in the absence of aluminum.…”

Section: Discussionmentioning

confidence: 99%

Highly selective dry etching of GaP in the presence of Al_xGa_1–xP with a SiCl₄/SF₆plasma

Hönl¹,

Hahn²,

Baumgartner³

et al. 2018

J. Phys. D: Appl. Phys.

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We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum gallium phosphide (Al x Ga1−xP). Utilizing mixtures of silicon tetrachloride (SiCl 4 ) and sulfur hexafluoride (SF 6 ), selectivities exceeding 2700:1 are achieved at GaP etch rates above 3000 nm min −1 . A design of experiments has been employed to investigate the influence of the inductively coupled-plasma power, the chamber pressure, the DC bias and the ratio of SiCl 4 to SF 6 . The process enables the use of thin Al x Ga1−xP stop layers even at aluminum contents of a few percent.

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Section: Discussionmentioning

confidence: 99%

Highly selective dry etching of GaP in the presence of Al_xGa_1–xP with a SiCl₄/SF₆plasma

Hönl¹,

Hahn²,

Baumgartner³

et al. 2018

J. Phys. D: Appl. Phys.

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“…MJ systems are usually constituted by three different possible substrate: Ge, GaAs, and InP. The introduction of chemical components in the different layers is beneficial (Yamaguchi et al, 2005): Al in the top cell has the property of increasing E G to values that cover a larger part of the solar spectrum, while few amounts of In reduce the mismatch between layers. In the context of the Japanese "New Sunshine Project", InGaP/InGaAs/Ge monolithic integrated cells have reached an efficiency of 31.7%, while for the stacked InGaP/GaAs//InGaAs ones an efficiency of 33.3% has been reported (Yamaguchi, 2003), representing at the time of their production the efficiency World Guinness for such cells.…”

mentioning

confidence: 99%

Nonisovalent Alloys for Photovoltaics Applications: Modelling IV-Doped III-V Alloys

Giorgi¹,

Kawai²,

Yamashita³

2012

Third Generation Photovoltaics

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“…Also, the voltage distribution of the limiting Ge bottom cell is considered spatially uniform since the tunnel diode in between the GaAs and Ge subcells is heavily doped. 25 Hence, we assumed negligible tunneling resistance and lateral resistances. These assumptions then make the electrical circuit sufficient to expand in-plane, in 2-D.…”

Section: Quasi-two-dimensional Simulation Modelmentioning

confidence: 99%

Impact of optically nonuniform luminescence coupling effect to the limiting cell conversion efficiency in InGaP/GaAs/Ge triple junction solar cell

et al. 2017

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Abstract. The impact of nonuniform spatial distribution of the luminescence coupling (LC) effect to the limiting cell conversion efficiency of multijunction solar cells (MJSCs) has been investigated. For this purpose, the laser beam induced current distribution maps of the limiting bottom cell have been acquired experimentally under varying middle-to-bottom cell LC efficiencies. The minimum and the maximum LC efficiencies demonstrated were 8.5% and 69%, respectively. To further analyze the measurement results, a quasi-two-dimensional simulation model considering the spatially nonuniform nature of the LC effect has been developed. A good agreement between the simulation and the measurement results suggests that the nonuniform LC current distribution is induced by optical phenomena such as photon escape and internal reflection. This nonuniformity then causes the absolute conversion efficiency of the limiting cell to be reduced by 1.35% at maximum LC efficiency. This reduction, when suppressed, can yield higher limiting cell conversion efficiency, which in turn may improve the overall MJSC conversion efficiency.

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Multi-junction III–V solar cells: current status and future potential

Cited by 368 publications

References 7 publications

Highly selective dry etching of GaP in the presence of Al_xGa_1–xP with a SiCl₄/SF₆plasma

Highly selective dry etching of GaP in the presence of Al_xGa_1–xP with a SiCl₄/SF₆plasma

Nonisovalent Alloys for Photovoltaics Applications: Modelling IV-Doped III-V Alloys

Impact of optically nonuniform luminescence coupling effect to the limiting cell conversion efficiency in InGaP/GaAs/Ge triple junction solar cell

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Multi-junction III–V solar cells: current status and future potential

Cited by 368 publications

References 7 publications

Highly selective dry etching of GaP in the presence of AlxGa1–xP with a SiCl4/SF6plasma

Highly selective dry etching of GaP in the presence of AlxGa1–xP with a SiCl4/SF6plasma

Nonisovalent Alloys for Photovoltaics Applications: Modelling IV-Doped III-V Alloys

Impact of optically nonuniform luminescence coupling effect to the limiting cell conversion efficiency in InGaP/GaAs/Ge triple junction solar cell

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Highly selective dry etching of GaP in the presence of Al_xGa_1–xP with a SiCl₄/SF₆plasma

Highly selective dry etching of GaP in the presence of Al_xGa_1–xP with a SiCl₄/SF₆plasma