Multi-Level Switching of Al-Doped HfO2 RRAM with a Single Voltage Amplitude Set Pulse

Lin, Jian-Yang; Wang, Shulong; Liu, Hongxia

doi:10.3390/electronics10060731

Cited by 28 publications

(24 citation statements)

References 38 publications

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“…In the previous work, the switching characteristics of a series of Pt/HfO x /Ti RRAM were studied [21][22][23]. On the basis of previous experimental research, in this paper, the Pt/HfO 2 /Ti model is simulated.…”

Section: Modelsmentioning

confidence: 99%

Modeling and Simulation of Hafnium Oxide RRAM Based on Oxygen Vacancy Conduction

et al. 2021

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The resistive memory has become one of the most promising new memory types because of its excellent performance, and HfO2 resistive material has attracted extensive attention. The conduction mechanism based on oxygen vacancy is widely recognized in the research of new nonvolatile memory. An RRAM electrothermal coupling model based on the oxygen vacancy conduction mechanism was constructed using COMSOL. The resistance process of the device is simulated by solving the coefficient partial differential equation, and the distribution of oxygen vacancy concentration, temperature, electric field, electric potential and other parameters in the dielectric layer at different voltages are obtained. The effects of temperature, dielectric layer thickness, top electrode thermal conductivity and conductive wire size on the resistance characteristics of the device are studied. It has guiding significance to further study the RRAM mechanism.

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Section: Modelsmentioning

confidence: 99%

Modeling and Simulation of Hafnium Oxide RRAM Based on Oxygen Vacancy Conduction

et al. 2021

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“…Moreover, URS has a disadvantage in that the reset current is too high for joule heating, or that the variation in switching parameters, such as the set and reset voltage, and high-resistance state (HRS) and low-resistance state (LRS) in the cycle-to-cycle and cell-to-cell, is large [1]. On the other hand, the phenomenon of bipolar resistive switching (BRS) in metal oxides has also been reported [6][7][8][9][10][11][12][13][14][15][16][17]. The set and reset processes occur at opposite polarities.…”

Section: Introductionmentioning

confidence: 99%

Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode

Ryu

Kim

2021

Metals

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In this work, we examined the irregular resistive switching behaviors of a complementary metal–oxide–semiconductor (CMOS)-compatible Cu/Al2O3/Si resistor device. X-ray photoelectron spectroscopy (XPS) analysis confirmed the chemical and material compositions of a Al2O3 thin film layer and Si substrate. Bipolar resistive switching occurred in a more stable manner than the unipolar resistive switching in the device did. Five cells were verified over 50 endurance cycles in terms of bipolar resistive switching, and a good retention was confirmed for 10,000 s in the high-resistance state (HRS) and the low-resistance state (LRS). Both high reset current (~10 mA) and low reset current (<100 μA) coexisted in the bipolar resistive switching. We investigated nonideal resistive switching behaviors such as negative-set and current overshoot, which could lead to resistive switching failure.

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“…Basically, low-resistance state (LRS) and high-resistance state (HRS) can be converted according to the applied voltage, and the state, once stored, has a nonvolatile characteristic that is maintained over time [4][5][6][7]. Among a lot of materials, metal oxides like TiO 2 , HfO 2 and Ta 2 O 5 are the most popular resistive switching materials due to their superior memory device behaviors, such as endurance, stability, repeatability, and reproducibility [8][9][10][11][12][13][14][15]. Regarding the resistive change switching effect of metal oxide-based RRAM devices, various mechanisms are known, depending on the resistive switching materials and the electrodes [16].…”

Section: Introductionmentioning

confidence: 99%

Improved Synaptic Device Properties of HfAlOx Dielectric on Highly Doped Silicon Substrate by Partial Reset Process

Kim¹,

Kwon²,

Ryu³

et al. 2021

Metals

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This work demonstrates the synaptic properties of the alloy-type resistive random-access memory (RRAM). We fabricated the HfAlOx-based RRAM for a synaptic device in a neuromorphic system. The deposition of the HfAlOx film on the silicon substrate was verified by X-ray photoelectron spectroscopy (XPS) analysis. It was found that both abrupt and gradual resistive switching could be implemented, depending on the reset stop voltage. In the reset process, the current gradually decreased at weak voltage, and at strong voltage, it tended to decrease rapidly by Joule heating. The type of switching determined by the first reset process was subsequently demonstrated to be stable switching by successive set and reset processes. A gradual switching type has a much smaller on/off window than abrupt switching. In addition, retention maintained stability up to 2000 s in both switching cases. Next, the multiple current states were tested in the gradual switching case by identical pulses. Finally, we demonstrated the potentiation and depression of the Cu/HfAlOx/Si device as a synapse in an artificial neural network and confirmed that gradual resistive switching was suitable for artificial synapses, using neuromorphic system simulation.

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Multi-Level Switching of Al-Doped HfO2 RRAM with a Single Voltage Amplitude Set Pulse

Cited by 28 publications

References 38 publications

Modeling and Simulation of Hafnium Oxide RRAM Based on Oxygen Vacancy Conduction

Modeling and Simulation of Hafnium Oxide RRAM Based on Oxygen Vacancy Conduction

Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode

Improved Synaptic Device Properties of HfAlOx Dielectric on Highly Doped Silicon Substrate by Partial Reset Process

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