Multicrystalline silicon solar cells from RST ribbon process

Moro, Fabrice De; Focsa, A.; Derbouz, Karim; Slaoui, A.; Auriac, N.; Lignier, Hélène; Keller, Philipp

doi:10.1002/pssc.201200087

Cited by 7 publications

(5 citation statements)

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“…Also Si-ribbon wafers grown by the RST method [7] were characterized as grown, and after different annealing protocols aiming to relax the residual stresses.…”

Section: Methodsmentioning

confidence: 99%

“…Other approaches aiming to reduce the cost of the raw material run in parallel; in particular, the use of upgraded metallurgical grade silicon (UMG-Si), which faces the problems related to the high number of metallic impurities [6]. Other approaches, as for instance growing Si-Ribbons on a Sacrificial Template (RST), are also being considered; however, this method can introduce large thermal gradients leading to large number of defects [7].…”

Section: Introductionmentioning

confidence: 99%

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Defect recognition by means of light and electron probe techniques for the characterization of mc-Si wafers and solar cells

Moralejo

Tejero

Hortelano

et al. 2016

Superlattices and Microstructures

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a b s t r a c tMulticristalline Silicon (mc-Si) is the preferred material for current terrestrial photovoltaic applications. However, the high density of defects present in mc-Si deteriorates the material properties, in particular the minority carrier diffusion length. For this reason, a large effort to characterize the mc-Si material is demanded, aiming to visualize the defective areas and to quantify the type of defects, density and its origin. In this work, several complementary light and electron probe techniques are used for the analysis of both mc-Si wafers and solar cells. These techniques comprise both fast and whole-area detection techniques such as Photoluminescence imaging, and highly spatially resolved time consuming techniques, such as light and electron beam induced current techniques and mRaman spectroscopy. These techniques were applied to the characterization of different mc-Si wafers for solar cells, e.g. ribbon wafers, cast mc-Si as well as quasi-monocrystalline material, upgraded metallurgical mc-Si wafers, and finished solar cells.

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“…Also Si-ribbon wafers grown by the RST method [7] were characterized as grown, and after different annealing protocols aiming to relax the residual stresses.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Defect recognition by means of light and electron probe techniques for the characterization of mc-Si wafers and solar cells

Moralejo

Tejero

Hortelano

et al. 2016

Superlattices and Microstructures

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“…In the RST material, the main impurities are carbon, oxygen and transition metals like Ti or Fe. Concentrations of C, O and transition metals are around 1 × 10 18 cm −3 , < 5 × 10 16 cm −3 , and between 1 × 10 13 and 1 × 10 14 cm −3 respectively . The section 4.1 discusses on the origin of the high carbon concentration in the RST process, i.e.…”

Section: Status Of the Rst Technologymentioning

confidence: 99%

Fast growth of thin multi‐crystalline silicon ribbons by the RST method

Heilbronn¹,

Moro²,

Jolivet³

et al. 2014

Crystal Research and Technology

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The ribbon on sacrificial template (RST) process is a ribbon direct-wafering technology with specific ability for high throughput and thin multicrystalline wafer production, in the range of 60-140 μm. Mechanical and electrical properties of the RST material were investigated. Ball on ring and four-point bending tests showed good fracture stress values up to 260 MPa. The conversion efficiency potential for passivated emitter and rear cells (PERC) made out from the RST material, around 16%, is shown to be limited by defects reducing minority carrier lifetime. The interaction between impurities, such as C and transitions metals, with structural defects such as dislocations, results in highly recombinative areas in RST wafers. A model is proposed which shows that the carbon substrate is an important source of carbon contamination in the silicon melt during the growth of the ribbon. This high C contamination can be accompanied by transition metal contamination and can have an influence on the growth stability and on the generation of structural defects, especially if C accumulates in a boundary layer just above the growth interface. The study of the segregation of Sb indicates that the process conditions are close to the case of the diffusive regime near the solid/liquid interface, with a boundary layer thickness of about 70 μm.

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“…Among these technologies, the silicon ribbon on a sacricial carbon template (RST) technique developed by Solarforce has emerged as the ribbon technology able to produce quasi at thin wafers down to 50 µm at high pull rates (≥ 5 cm/ms); a conversion eciency of 16% has recently been obtained on RST wafers 80 µm thick [3,4]. The vertical growth conguration at high pulling speeds of this technique results in large temperature gradients, in excess of 1000…”

Section: Introductionmentioning

confidence: 99%

Raman Study of Multicrystalline Silicon Wafers Produced by the RST Process

Tejero

Tupin²,

González

et al. 2014

Acta Phys. Pol. A

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In the silicon ribbon on a sacricial template process silicon is deposited on both sides of a carbon ribbon, thus forming a Si/carbon/Si trilayer. The fast cooling of the ribbon in large temperature gradients generates stresses that are detrimental to both the electrical performance and the mechanical behaviour of the wafers. The assessment of the stresses is crucial for the setting-up of thermal treatments allowing for the stress relaxation of the wafers, prior to the cell fabrication. We present an analysis of the stress in the as-grown trilayer by a simulation of the thermomechanical behaviour of the cooling ribbon. Experimental measurements of the stress in as-grown and annealed trilayers are also presented. The results permit to establish the conditions for optimized growth and annealing.

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Multicrystalline silicon solar cells from RST ribbon process

Cited by 7 publications

References 0 publications

Defect recognition by means of light and electron probe techniques for the characterization of mc-Si wafers and solar cells

Defect recognition by means of light and electron probe techniques for the characterization of mc-Si wafers and solar cells

Fast growth of thin multi‐crystalline silicon ribbons by the RST method

Raman Study of Multicrystalline Silicon Wafers Produced by the RST Process

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