Multielement Analysis of Graphite and Silicon Carbide by Inductively Coupled Plasma Atomic Emission Spectrometry Using Solid Sampling and Electrothermal Vaporization

Abstract

An improved graphite furnace electrothermal vaporization device, equipped with an autosampler system for precise and almost contamination-free introduction of solid samples, was used for the simultaneous determination of Al,

Direct determination of impurities in high purity silicon carbide by inductively coupled plasma optical emission spectrometry using slurry nebulization technique

“…values for stable suspension. Comparatively, SoS-ETV-ICP-OES [8] were consistently Table 2 Limits of detection for high purity SiC (for sample concentration of 1%, m V −1 ) using slurry ICP-OES and comparison to those reported by the other methods Limits of detection (ng g −1 )…”

“…W-coil-ETV-ICP-OES [9] SoS-ETV-ICP-OES [8] INAA [19] SlS-ETAAS [20] ICP-MS decomposition [19] Al 2000 2500 17,000 85 --6000 Ca 300 2300 110 25 60,000 -Interference Cr 480 1500 2400 5 10 200 400 Cu 400 350 540 10 5000 50 90 Fe 400 1000 3600 50 600 400 17,000 Mg 600 20 120 30 --9500 Ni 1200 5000 3000 80 100 800 200 Mn 40 250 110 -4 20 60 Ti 40 600 5400 --5000 Interference V 160 2000 ---2000 500 Note: Neb, nebulization; W-coil-ETV, tungsten electrothermal vaporization; SoS-ETV, solid sampling electrothermal vaporization; INAA, instrument neutron activation analysis; SlS-ETAAS, slurry sample introduction electrothermal atomic absorption spectrometry. (-), LOD not reported.…”

“…However, blank of flux and high salt content considerably limit its application, especially for the samples in high purity. In order to avoid the problems causing from dissolution, direct solid analysis of ceramics by ICP-OES using solid sample introduction techniques have been reported over the last years [3,4,[7][8][9]. With the use of electrothermal vaporization (ETV)-ICP-OES [8], the lower limits of detection could be achieved.…”

“…In order to avoid the problems causing from dissolution, direct solid analysis of ceramics by ICP-OES using solid sample introduction techniques have been reported over the last years [3,4,[7][8][9]. With the use of electrothermal vaporization (ETV)-ICP-OES [8], the lower limits of detection could be achieved. However, the analyte/matrix separation in the vaporizer is not complete and as a consequence, the different behavior of Cu and Fe when processed from aqueous standards and from silicon carbide in the presence of Freon, calibration using aqueous standard solu- tion is not sufficiently accurate.…”

Determination of Trace Elements in Sintered and Single-Crystal Silicon Carbide by Laser Ablation in Liquid Inductively Coupled Plasma Mass Spectrometry

“…The use of electrothermal vaporization inductively coupled plasma optical emission spectrometry for analysis of SiC has also been reported. 16 In addition, LA-ICPMS has been used to analyze SiC powder with non-matrix-matched calibration; 17 the measured concentrations of B, Ti, Cr, Mn, Fe, Ni, and Cu in a reference material (BAM-S003) were found to be in good agreement with the certified values for the material. Slurry nebulization ICPMS analysis of SiC powder has been reported, but CRMs are necessary for calibration.…”