Multifunctional computing-in-memory SRAM cells based on two-surface-channel MoS2 transistors

Wang, Fan; Li, Jiayi; Zhang, Zhenhan; Ding, Yi; Xiong, Yan; Hou, Xianghui; Chen, Huawei; Zhou, Peng

doi:10.1016/j.isci.2021.103138

Cited by 8 publications

(6 citation statements)

References 33 publications

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“…Some of them also proposed new memory architectures to take full advantage of 2D materials and enhance memory performances. [ 107–109 ]…”

Section: Integrated Circuitsmentioning

confidence: 99%

“…Symmetrical 4T2R/skewed 3T3R SRAM cells that contain only six components each are also proposed by researchers. [ 108 ] These modified SRAM structures demonstrate the potential for high integration density and low power consumption.…”

Section: Integrated Circuitsmentioning

confidence: 99%

“…3T3R SRAM with an additional local logic unit design composed of TSC transistors is implemented to realize skewed in‐memory computing with NAND and NOR operations. [ 108 ] Other than SRAMs, NVM inverter circuits have also been implemented by polarization switching in a ferroelectric medium ( Figure a,b) or on‐surface molecular switching tuned by light illumination. [ 173,175 ] Advanced logic operations can be performed with more complicated device structures and circuitry configurations.…”

Section: In‐memory Computational Applicationsmentioning

confidence: 99%

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Circuit‐Level Memory Technologies and Applications based on 2D Materials

Liu

Yang

et al. 2022

Advanced Materials

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random-access memory (DRAMs), static random-access memory (SRAMs), [1] and flash memory, [2] multiple transistors and capacitors are employed to constitute a single functional cell. These functional cells are typically integrated to form a memory array for advanced functionality, miniaturized footprints, low power consumption, and reduced latency. Traditional silicon-based complementary metal-oxidesemiconductor (CMOS) technology has been widely used to build these memory arrays. However, the performance improvement of CMOS-based memory relies on the advance of nanofabrication technology to scale down the feature size of transistors, which is approaching the physical limit. [3] To overcome this bottleneck, emerging memory technologies are brought up as promising supplements to conventional memory devices. [4] These novel types of memory include resistive random-access memory (RRAM), [5,6] ferroelectric RAM (FeRAM), [7] optoelectronic RRAM (ORRAM), [8,9] phase-change memory (PCM), [10] and spin-transfer torque magnetoresistive RAM (STT-MRAM). [11,12] Furthermore, emerging memory devices allow non-von-Neumann architectures that pave the way toward high-performance in-memory computing technology. [13,14] For example, memristive crossbar arrays composed of 1-transistor-1-resistor (1T1R) unit cells can enable in-memory computing and are the most cost-efficient thanks to their two-terminal structure. [15] Advanced 3D monolithic stacking integration also emerges as a promising approach to Memory technologies and applications implemented fully or partially using emerging 2D materials have attracted increasing interest in the research community in recent years. Their unique characteristics provide new possibilities for highly integrated circuits with superior performances and low power consumption, as well as special functionalities. Here, an overview of progress in 2D-material-based memory technologies and applications on the circuit level is presented. In the material growth and fabrication aspects, the advantages and disadvantages of various methods for producing large-scale 2D memory devices are discussed. Reports on 2D-material-based integrated memory circuits, from conventional dynamic random-access memory, static random-access memory, and flash memory arrays, to emerging memristive crossbar structures, all the way to 3D monolithic stacking architecture, are systematically reviewed. Comparisons between experimental implementations and theoretical estimations for different integration architectures are given in terms of the critical parameters in 2D memory devices. Attempts to use 2D memory arrays for in-memory computing applications, mostly on logic-in-memory and neuromorphic computing, are summarized here. Finally, challenges that impede the large-scale applications of 2D-material-based memory are reviewed, and perspectives on possible approaches toward a more reliable system-level fabrication are also given, hopefully shedding some light on future research.

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“…Some of them also proposed new memory architectures to take full advantage of 2D materials and enhance memory performances. [ 107–109 ]…”

Section: Integrated Circuitsmentioning

confidence: 99%

Section: Integrated Circuitsmentioning

confidence: 99%

Section: In‐memory Computational Applicationsmentioning

confidence: 99%

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Circuit‐Level Memory Technologies and Applications based on 2D Materials

Liu

Yang

et al. 2022

Advanced Materials

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“…Either NAND gates or NOR gates can be regarded as an exhaustive set of modern logic systems, which can implement the construction of two-level combinatorial logics. 28,[143][144][145][146][147][148] Beyond inverters, more complex logic functions, especially NAND and NOR logic gates have become recently the focus of intense research through complementary pairs of n-type and p-type transistors. However, the polarity control enabled by traditional doping strategies, such as ion implantation and diffusion, are impractical and troublesome for TMD layered materials owing to their ultrathin body nature.…”

Section: Nand and Nor Logic Gatesmentioning

confidence: 99%

Transistors and logic circuits enabled by 2D transition metal dichalcogenides: a state-of-the-art survey

Qian

Wang

et al. 2022

J. Mater. Chem. C

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“…[2][3][4] In recent years, techniques integrating computing and storage units into one single unit have shown great potential in high-performance and low-power system implementations. [5][6][7][8][9] Concepts like computing in memory, [10][11][12] in memory computing, [13][14][15] and logic in memory [9,16,17] have been extensively studied with various structures such as resistive random access memory (RRAM) [18][19][20] and memory based on FGFETs . [9,16,21,22] Compared with the current RRAM technology, the FGFET structure has better control in device operation and CMOS compatibility.…”

Section: Introductionmentioning

confidence: 99%

Multifunctional Logic‐in‐Memory Cell Based on Wafer‐Scale MoS₂ Thin Films Prepared by Atomic Layer Deposition

Zhang

Cao

et al. 2022

Physica Rapid Research Ltrs

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Large‐volume data storage and high‐efficiency data processing have been greatly urged by the fast development in artificial intelligence and internet of things involving novel semiconductor materials. Logic‐in‐memory has provided a promising route to address the processing/storage bottleneck in advanced computing systems. Herein, a logic‐in‐memory design based on wafer‐scale MoS2 floating‐gate field‐effect transistor (FGFET) arrays is demonstrated. Multiple logic states and over 10 V memory window are achieved through electrical gate modulation, which further enables in‐memory computing including logic functions of inverter and two‐input NAND gates. Such robust and stable logic‐in‐memory is ascribed to the highly uniform wafer‐scale MoS2 thin film prepared by atomic layer deposition (ALD)‐based synthesis and the reproducible electrical performance of the device arrays. As both memory and computing units are based on floating‐gate FET architecture with area efficiency, the proposed logic‐in‐memory cell can accomplish multifunctional tasks with fewer transistors, suggesting a potential application in high‐density and complex information processing and data storage systems.

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Multifunctional computing-in-memory SRAM cells based on two-surface-channel MoS2 transistors

Cited by 8 publications

References 33 publications

Circuit‐Level Memory Technologies and Applications based on 2D Materials

Circuit‐Level Memory Technologies and Applications based on 2D Materials

Transistors and logic circuits enabled by 2D transition metal dichalcogenides: a state-of-the-art survey

Multifunctional Logic‐in‐Memory Cell Based on Wafer‐Scale MoS₂ Thin Films Prepared by Atomic Layer Deposition

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Multifunctional computing-in-memory SRAM cells based on two-surface-channel MoS2 transistors

Cited by 8 publications

References 33 publications

Circuit‐Level Memory Technologies and Applications based on 2D Materials

Circuit‐Level Memory Technologies and Applications based on 2D Materials

Transistors and logic circuits enabled by 2D transition metal dichalcogenides: a state-of-the-art survey

Multifunctional Logic‐in‐Memory Cell Based on Wafer‐Scale MoS2 Thin Films Prepared by Atomic Layer Deposition

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Resources

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Multifunctional Logic‐in‐Memory Cell Based on Wafer‐Scale MoS₂ Thin Films Prepared by Atomic Layer Deposition