Multifunctional heterostructures constructed using MoS₂ and WS₂ nanoribbons

Abstract

Using first-principles calculations based on nonequilibrium Green's function together with density functional theory, we investigated the electronic transport properties of some devices consisting of armchair and zigzag MoSNRs/WSNRs in-plane heterostructures. The results indicate that these heterostructures exhibit rectifying performance, which are depressed as the number of WSNR unit cell decreases. In addition, the NDR effect is observed and can be modulated. Importantly, the zigzag MoSNRs/WSNRs heterostructures can be used as spintronic devices because of their tunable spin filtering behavior and NDR effect. The devices with WSNRs electrode display a better NDR effect and spin filtering behavior. The unique properties of these heterostructures suggest promising applications in the next generation nanoelectronic devices.

Growth control, interface behavior, band alignment, and potential device applications of 2D lateral heterostructures

“…Due to the importance of 2D TMD materials themselves and also being motivated by the experimental synthesis of various in‐plane TMD heterostructures, there have been plenty of relevant first‐principles calculations . Those earlier theoretical studies mainly focused on the absolute positions and charge distributions of valence band maximum (VBM) and conduction band minimum (CBM) of the heterostructures .…”

“…An et al observed an interesting NDR effect in lateral heterostructure by MoS 2 /WS 2 zigzag nanoribbon due to very similar band structures of the pristine MoS 2 and WS 2 nanoribbons. In addition to NDR effect, Li's group observed the spin filtering behavior in the zigzag MoS 2 /WS 2 nanoribbon heterostructures, suggesting potential applications in spintronic devices. Meanwhile, armchair MoS 2 /WS 2 nanoribbon heterostructures exhibit rectifying behavior in the I – V curve, giving rise to application as p – n junctions.…”

Lateral and Vertical Heterostructures of Transition Metal Dichalcogenides

“…Prototype devices based on these TMD-based heterostructures have been assembled for various electronic, optoelectronic, and photovoltaic applications; see, e.g., refs and for recent reviews. For example, both vertical and lateral heterostructures comprising semiconductor/semiconductor junctions have been used as active components in p–n diodes, − photodiodes, , photodetectors, ,, and field effect transistors (FETs), ,, which were also the main subject of numerous theoretical studies. − In contrast, TMD-based heterostructures comprising metal/semiconductor junctions have been studied to a much lesser extent, albeit their unusual electronic properties and important device capacities thereof have been heralded by early experimental , and theoretical − studies. It should also be pointed out that using metallic SL TMDs stacked with semiconducting SL TMDs (as in vertical heterostructures) has been explored , as a viable strategy for achieving an efficient and stable electrical contact between 2D semiconductors and metal electrodes.…”

Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides

“…Zhou et al [141] studied several perpendicular and parallel ribbon geometries of MoS 2 -WS 2 HSs, finding that an armchair interface shows rectifying behavior, which is suppressed as the number of WS 2 slabs decreases. These HSs are proposed for spintronics due to spin filtering and NDR capabilities [142]. The rectification ratio, RR(V ) = |I(V )/I(−V )|, which characterizes the asymmetry current-voltage, is predicted to be as high as 18.3.…”