Multigroup equations to the hot-electron hot-phonon system in III–V compound semiconductors

A deterministic solver for the transport of the AlGaN/GaN 2D electron gas including hot-phonon and degeneracy effects

“…However, the treatment of such problems by means of deterministic approaches constitutes an interesting alternative to the usual procedure, since these methods provide noise-free results and high efficiency when studying transient regimes, as it has been shown for the particle transport in polar semiconductors [5,6]. To our knowledge, the application of deterministic solution techniques to the BBP equations for the investigation of hot-phonon effects and degeneracy phenomena at AlGaN/GaN heterojunctions has not been performed yet.…”

A Deterministic Solver for the 1D Non-Stationary Boltzmann-Poisson System for GaAs Devices: Bulk GaAs and GaAs n+-n i -n+ Diode

“…In these simulations, the impurity density is set to N I = 10 17 cm −3 . We observe the occurrence of velocity overshoots for high fields as a consequence of the ballistic motion of electrons right after the onset of the electric field [11]. Additionally, we allude to the fact that the higher value of N I in comparison to that used above leads to significantly lower stationary-state values for the drift velocity at 2 kVcm −1 and 5 kVcm −1 , while all of the steady state values of the other drift velocities as well as all of the energies displayed in Fig.…”

“…We observe high asymmetry of the distribution function as well as a drastic decline for energies higher than E 0L , since electrons with such energies preferably populate the L-valleys. Moreover, the wall effect, i.e., the accumulation of electrons at energies right below E 0L with a maximum in the direction normal to the electric field, is clearly observable [11].…”

“…The multigroup approach, which is applied to treat the dependence of the electron distribution function on the electron wave vector, has been used with great success for investigating the particle transport in bulk semiconductors [9][10][11]. It consists of a partition of the momentum space into tiny cells and the approximation of the distribution function by an appropriate ansatz.…”

A direct multigroup-WENO solver for the 2D non-stationary Boltzmann–Poisson system for GaAs devices: GaAs-MESFET

“…The multigroup approach, which is applied to treat the dependence of the electron distribution function on the electron wave vector, has been used with great success for investigating the particle transport in bulk semiconductors [11][12][13]. It consists of a partition of the momentum space into tiny cells and the approximation of the distribution function by an appropriate ansatz, which leads to a similar approximation of the collision integral of the BTE as it was obtained in [8].…”