Multilaver Mirrors For 182Å

Slaughter, J. M.; Burkland, M.; Kearney, Patrick A.; Lampis, Andrea; Milanovic, Zoran; Schulze, Dean; Falco, Charles M.; Roberts, James R.; Kerner, Jonathan A.; Saloman, E. B.

doi:10.1117/12.962646

Cited by 7 publications

(3 citation statements)

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“…Work remains to be done on this material system, but our initial results make the i -i/B system look very promising. 6. CONCLUSION Several material systems with promise for use in soft x-ray multilayer mirrors have been identified.…”

Section: Preliminary Experimental Resultsmentioning

confidence: 99%

Materials for multilayer x-ray optics at wavelengths below 100 A

1991

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Section: Preliminary Experimental Resultsmentioning

confidence: 99%

Materials for multilayer x-ray optics at wavelengths below 100 A

1991

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“…In single-crystal systems it is not uncommon to observe linear segments which follow the exponential envelopes described by Eqns. (1) and (2). Such segments are a signature of layer-by-layer growth (also called Frank van der Merwe growth), in which one monolayer is almost complete before the next monolayer begins to form upon it.…”

Section: Background: Aes and Xps Growth Studiesmentioning

confidence: 97%

“…The expressions for the normalized intensity from materials A and B for the simple "layer growth" described above are given by (i _e '1 (1) RA(EA)J (2) where 8 is the emission angle, d is the layer thickness, 1' is the intensity of the bulk element p, and the backscattering correction factor RB(EA)/RA(EA) accounts for the fact that we are considering a thin film of A on a thick substrate of B.1° The quantity )(E)cos4 is often referred to as the effective escape depth E) for an electron of energy E. For our analyzer geometry cos4=O.64, so that =O.64(E). Thus there is a 36% increase in surface sensitivity due to the geometry of our apparatus.…”

Section: Background: Aes and Xps Growth Studiesmentioning

confidence: 99%

<title>Characterization of Pd-B, Ag-B, and Si-B interfaces</title>

1992

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Boron-based multilayer mirrors have theoretical reflectivities >50% for wavelengths between 65 and -420 A. Such multilayers would be quite useful, since this wavelength region lies above that for which W/C functions, and below that for which Mo/Si works well. We have studied the growth of several candidate materials on boron in order to determine their growth modes, the chemical sharpness of the interfaces, and the structure of the layers formed. The films were deposited in ultrahigh vacuum and studied with in situ Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), and reflection high-energy electron diffraction. Scanning tunneling microscopy characterization and Rutherford backscattering calibrations were performed after removing the samples from the vacuum system. For all of these studies amorphous B films were first formed by depositing at room temperature onto oxidized Si wafers. Following deposition of each B film, overlayers of Pd, Ag, or Si were deposited at substrate temperatures of -50 and immediately studied with AES and XPS. In the Pd case, we find that it reacts with the B to form a smooth, amorphous layer, with xaO.9.This reaction occurred for all Pd coverages studied, from .3 to 230 A. However, due to the high Pd content of this reacted compound, our calculations show that the should perform as a good absorber layer as part of PdXB1.X/B multilayer mirrors. We find that Si deposited onto B forms a sharp interface and an amorphous overlayer of pure Si. Depositing Ag on B results in a polycrystalline layer, composed of large Ag islands.

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