Multilevel accumulative switching processes in growth-dominated AgInSbTe phase change material

Arjunan, Mozhikunnam Sreekrishnan; Mondal, Anirban; Das, Amlan; Adarsh, K. V.; Manivannan, Anbarasu

doi:10.1364/ol.44.003134

Cited by 14 publications

(17 citation statements)

References 21 publications

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“…[ 17 ] Significant effort has been devoted to improving the reliability issues for multilevel programming in PCMs. [ 18 ] However, the poor thermal stability of the amorphous structure in PCMs could be the primary reason for the lack of controllability in precise tuning of the partially crystalline or amorphous fraction. [ 23 ] Each intermediate level between the initial reset and final set state is a mixture of the crystalline and amorphous phase; thus, instability in the amorphous phase could affect the stability of each level, leading to variations in the reflectivity levels.…”

Section: Figurementioning

confidence: 99%

High‐Stability and Low‐Noise Multilevel Switching in In₃SbTe₂ Material for Phase Change Photonic Memory Applications

Arjunan

Saxena

Mondal

et al. 2020

Physica Rapid Research Ltrs

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Herein, eight uniform optical states (3 bit) are demonstrated by irradiating nanosecond laser pulses on thin In3SbTe2 films having high stability (260 °C), revealing at least 1% reflectivity contrast between any two consecutive states with strikingly low noise variation of 0.18% at each level, which is almost a 50% lower value compared to Ge2Sb2Te5 and AgInSbTe materials, revealing the two times enhanced signal‐to‐noise ratio of the In3SbTe2 material. Furthermore, a systematic structural evolution during multilevel switching is investigated using confocal Raman spectroscopic studies. The experimental findings demonstrate low‐noise yet highly stable multilevel switching toward the development of reliable phase change photonic memory devices.

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Section: Figurementioning

confidence: 99%

High‐Stability and Low‐Noise Multilevel Switching in In₃SbTe₂ Material for Phase Change Photonic Memory Applications

Arjunan

Saxena

Mondal

et al. 2020

Physica Rapid Research Ltrs

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“…In this framework, multishot laser pulses with fixed energy have been used to realize the multiple crystalline levels in PCMs, as shown in Figure . [ 52–55 ] Each laser pulse in the total irradiated pulses of lower energy induces a partial crystallization. In the initial stage of the crystallization process, the crystalline nuclei begin to form with the irradiated pulses.…”

Section: Multilevel Switching Techniquesmentioning

confidence: 99%

“…[ 56 ] Thus the crystalline nuclei formation is a gradual process in nucleation dominated materials, [ 57 ] whereas the crystallization of growth dominated materials takes place abruptly. [ 58,59 ] However, recent studies in free‐space optics have illustrated that the multilevel accumulative switching technique is feasible in growth dominated AgInSbTe (AIST) PCM [ 55 ] demonstrating the accumulation of crystallization irrespective of their switching kinetics. In addition, the multishot laser pulses with fixed energy reduce the complexity of the switching process.…”

Section: Multilevel Switching Techniquesmentioning

confidence: 99%

Multilevel Switching in Phase‐Change Photonic Memory Devices

Arjunan

Durai

Manivannan

2021

Physica Rapid Research Ltrs

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Multilevel storage in chalcogenide‐based phase‐change materials is one of the desired characteristics to design neuromorphic and in‐memory computing applications. However, precisely controlling the crystalline and amorphous fraction to achieve reliable multilevel states is one of the key challenges in multilevel switching. Herein, multilevel switching is focused on the aspect of optical domain, where it enjoys the benefits of higher bandwidth with low delay connectivity suitable for non‐von Neumann architecture. The essential requirements for multilevel optical switching are discussed in terms of programming techniques, novel device structures, and emerging materials for its better optimization. Furthermore, the impact of nature of crystallization mechanism on the multilevel switching for different families of phase‐change materials is reviewed. In addition, the multilevel switching for neuromorphic engineering and in‐memory computation based on the integrated photonic memory devices are assessed. Finally, several challenges and different strategies to improve the performance of multilevel switching in phase‐change materials are discussed and thereby signify its importance for the design of future on‐chip phase‐change photonic memory devices.

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“…As a storage medium, Phase-Change RAM (PCRAM) is mainly based upon chalcogenide (Group VI) and pnictide (Group V) elements, in the form of Germanium-antimony-tellurium (GST) alloys such as Ge 2 Sb 2 Te 5 (usually abbreviated as GST) and compositional variations of GeSb [ 101 ], GeTe [ 102 ], InSbTe [ 103 ], InGeTe [ 104 ], InSbGe, AgInSbTe [ 105 ], GeSbSeTe, GeSbReBi, SiSbTe [ 106 ], and SbTe [ 107 ]. The particularly relevant feature of these compositions, here, is that their electrical/optical properties, such as their electrical resistivity and optical reflectivity, differ sharply between their crystalline state (with a long-range atomic order) and their amorphous state (with a short-range atomic order).…”

Section: Logic In Phase-change Rammentioning

confidence: 99%

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

Xiong

et al. 2020

Materials

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Recent progress in the development of artificial intelligence technologies, aided by deep learning algorithms, has led to an unprecedented revolution in neuromorphic circuits, bringing us ever closer to brain-like computers. However, the vast majority of advanced algorithms still have to run on conventional computers. Thus, their capacities are limited by what is known as the von-Neumann bottleneck, where the central processing unit for data computation and the main memory for data storage are separated. Emerging forms of non-volatile random access memory, such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory, and resistive random access memory, are widely considered to offer the best prospect of circumventing the von-Neumann bottleneck. This is due to their ability to merge storage and computational operations, such as Boolean logic. This paper reviews the most common kinds of non-volatile random access memory and their physical principles, together with their relative pros and cons when compared with conventional CMOS-based circuits (Complementary Metal Oxide Semiconductor). Their potential application to Boolean logic computation is then considered in terms of their working mechanism, circuit design and performance metrics. The paper concludes by envisaging the prospects offered by non-volatile devices for future brain-inspired and neuromorphic computation.

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Multilevel accumulative switching processes in growth-dominated AgInSbTe phase change material

Cited by 14 publications

References 21 publications

High‐Stability and Low‐Noise Multilevel Switching in In₃SbTe₂ Material for Phase Change Photonic Memory Applications

High‐Stability and Low‐Noise Multilevel Switching in In₃SbTe₂ Material for Phase Change Photonic Memory Applications

Multilevel Switching in Phase‐Change Photonic Memory Devices

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

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Multilevel accumulative switching processes in growth-dominated AgInSbTe phase change material

Cited by 14 publications

References 21 publications

High‐Stability and Low‐Noise Multilevel Switching in In3SbTe2 Material for Phase Change Photonic Memory Applications

High‐Stability and Low‐Noise Multilevel Switching in In3SbTe2 Material for Phase Change Photonic Memory Applications

Multilevel Switching in Phase‐Change Photonic Memory Devices

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

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High‐Stability and Low‐Noise Multilevel Switching in In₃SbTe₂ Material for Phase Change Photonic Memory Applications

High‐Stability and Low‐Noise Multilevel Switching in In₃SbTe₂ Material for Phase Change Photonic Memory Applications