Multilevel Resistance Switching Memory in La_2/3Ba_1/3MnO₃/0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ (011) Heterostructure by Combined Straintronics-Spintronics

Abstract

We demonstrate a memory device with multifield switchable multilevel states at room temperature based on the integration of straintronics and spintronics in a La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) (011) heterostructure. By precisely controlling the electric field applied on the PMN-PT substrate, multiple nonvolatile resistance states can be generated in La2/3Ba1/3MnO3 films, which can be ascribed to the strain-modulated metal-insulator transition and phase separation of Manganite. Furthermore, because of the strong coupling between spin and charge degrees of freedom, the resistance of the La2/3Ba1/3MnO3 film can be readily modulated by magnetic field over a broad temperature range. Therefore, by combining electroresistance and magnetoresistance effects, multilevel resistance states with excellent retention and endurance properties can be achieved at room temperature with the coactions of electric and magnetic fields. The incorporation of ferroelastic strain and magnetic and resistive properties in memory cells suggests a promising approach for multistate, high-density, and low-power consumption electronic memory devices.

Sputtering-deposited amorphous SrVOx-based memristor for use in neuromorphic computing

“…2(a). The I-V characteristics during the voltage sweeps are indicative of typical bipolar resistive switching behavior [15][16][17][18][19][20] . After the electroforming process, DC voltage sweeping from 0 V → 1 V → 0 V with an I CC of 1 mA resulted in a SET process (i.e., an off-to-on transition) and sweeping from 0 V → −0.7 V → 0 V without an I CC led to a RESET process (i.e., an on-to-off transition).…”

“…This type of multilevel resistance allows the possibility of multilevel storage, which can provide more storage space within a single cell and generate synaptic behavior, leading to material and structural innovation [11][12][13][14] . Thus, researchers have made an effort to realize multilevel storage using a variety of approaches, including heterostructures 15,16 , the insertion of an interlayer 17,18 , and doping techniques 19,20 .…”

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“…By tuning the electric potential applied to a ferromagnetic film, previous investigations indicate that the corresponding magnetoresistance4950, Hall effects5152 and magnetization switching102328 are highly reproducible. By choosing suitable electric potential ranges, the changing of pinning sites such as impurities, grain boundary, dislocations, and voids in the ferromagnetic films can be avoided10232849505152. Assuming that pinning sites are independent of the applied electric potential, the pinning of domain wall motion related to hysteresis loss energy can be neglected for an analysis of Δ H C .…”

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“…In a recent study, stretchable silicon nanomembranes circuits incorporate silicon nonvolatile memory arrays with nanocrystal floating gates in a wearable device (Figure c) . Other emerging data storage technologies include piezoelectricity and inverse magnetostriction . These nonvolatile memories operate at low energy schemes with storage densities up to 0.2 µm 2 .…”