Multilevel resistive random access memory achieved by MoO₃/Hf/MoO₃ stack and its application in tunable high-pass filter

Abstract

In this work, the multilevel resistive random access memories (RRAMs) have been achieved by using the structure of Pt/MoO 3 /Hf/MoO 3 /Pt with four stable resistance states. The devices show good retention property of each state (>10 4 s) and large memory window (>10 4 ). The simulation and experimental study reveal that the resistive switching mechanism is ascribed to combination of the conductive filament in the stack of MoO 3 /Hf next to the top electrode and redox reaction at the interface of Hf/MoO 3 next to bottom electrode. The fitting results of current-voltage characteristics under low sweep voltage indicate that the conduction of HRSs is dominated by the Poole-Frenkel emission and that of LRS is governed by the Ohmic conduction. Based on the RRAM, the tunable high-pass filter (HPF) with configurable filtering characteristics has been realized. The gainfrequency characteristics of the programmable HPF show that the filter has high resolution and wide programming range, demonstrating the viability of the multilevel RRAMs for future spiking neural network and shrinking the programmable filters with low power consumption.

Artificial Tactile Sensing Neuron with Tactile Sensing Ability Based on a Chitosan Memristor

“…[ 21 ] Memristor devices have low power consumption, high running speed, and good storage capacity. [ 22 , 23 ] When TiO 2 , MoO 3 , CeO 2 , and other inorganic oxides are combined with complementary metal oxide semiconductor technology as active layers, memristors with excellent memory function can be produced, [ 24 , 25 , 26 ] but the process is relatively complex, and a large amount of electronic waste will be generated as the device's service life is exhausted. [ 27 ] Because of their excellent biocompatibility, degradability and low cost, biomaterials are widely used in the production of memristors, [ 28 ] which can also realize resistance switching behavior and memory storage function.…”

Improved switching performance of a Molybdenum Oxide-based bi-layer resistive memory

“…Such material properties could contribute in achieving higher ON/OFF ratio and avoiding extra power consumption [1,2]. Several MoO3 based resistive memory have been demonstrated [8,9]. However, the high programming voltage (above ±2.5 V) and reproducibility of resistive switching in nanoscale devices are main issues researchers facing [10].…”