Multiple gate devices: advantages and challenges

Poiroux, T.; Vinet, M.; Faynot, O.; Widiez, J.; Lolivier, J.; Ernst, T.; Prévitali, B.; Deleonibus, S.

doi:10.1016/j.mee.2005.04.095

Cited by 116 publications

(56 citation statements)

References 19 publications

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“…[1][2][3] Therefore, accuracy of measurement at the nanometer scale in all axes (x, y, and z) represents the advent of a non-negligible factor in the race to downsize device dimensions, as illustrated in Figure 2. For the conventional complementary metal-oxide semiconductor (CMOS) device with vertical gate and channel underneath, the single most important parameter is the bottom CD value (CD1 as indicated in Figure 2a).…”

Section: D-metrology Is Becoming Mandatory For Nanofabrication In Thmentioning

confidence: 99%

Critical dimension metrology: perspectives and future trends

Foucher¹

2008

SPIE Newsroom

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3D-metrology is becoming mandatory for nanofabrication in the production environment.Every flowchart in micro-and nanofabrication includes several critical dimension (CD) metrology steps to guarantee device performance. To measure pattern density in highly-controlled processes such as lithography, plasma etching, and materials deposition, engineers traditionally employ electron-or photonbased techniques. Most common in semiconductor manufacture are scatterometry, an optical diffraction-based method, and scanning electron microscopy (CD-SEM), a secondary electron emission-based technology. Although both are eminently repeatable, fast, and useful in terms of cost per measurement, will they remain state-of-the-art with the advent of ever smaller nanodevices?Indeed, as dimensions and architectures move towards sub32nm node, CD metrology, both for production process monitoring and process development, must cope with challenges presented by the latest materials, the new process flowcharts like the double patterning approach for lithography, and novel architectures such as 3D-multiwires field-effect transistor (FET) devices (see Figure 1). [1][2][3] Therefore, accuracy of measurement at the nanometer scale in all axes (x, y, and z) represents the advent of a non-negligible factor in the race to downsize device dimensions, as illustrated in Figure 2. For the conventional complementary metal-oxide semiconductor (CMOS) device with vertical gate and channel underneath, the single most important parameter is the bottom CD value (CD1 as indicated in Figure 2a). However, for nanowire FET devices, a full set of parameters must be tightly controlled as described in Figure 2b, with in-line metrology including alignment, thickness, critical dimensions, and length.In addition to a multiple set of morphological outputs for future nanodevices, feature edge roughness will play a key role in the quality of device performance and in the ramp-up time for pilot lines. Indeed, as illustrated in Figure 3, as we are Continued on next page

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Section: D-metrology Is Becoming Mandatory For Nanofabrication In Thmentioning

confidence: 99%

Critical dimension metrology: perspectives and future trends

Foucher¹

2008

SPIE Newsroom

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“…The success of this approach depends on the lithography capability to align very short gates one to the other. Figure 10b shows a 10 nm non self-aligned planar double gate transistor, fabricated thanks to the use of wafer bonding and e-beam lithography [70][71][72][73]. Notice that a quasi-perfect gate alignment, with an accuracy of a few nanometers, could be achieved thanks to the self-aligned regeneration of the alignment marks after the bonding step [74].…”

Section: Multigate Devicesmentioning

confidence: 99%

“…Thanks to their better electrostatics control, multiple gate transistors are likely to allow a triple drive current with respect to single gate transistors at a given off-state current [73,88].…”

Section: Multigate Devicesmentioning

confidence: 99%

Physical and technological limitations of NanoCMOS devices to the end of the roadmap and beyond

Deleonibus

2006

Eur. Phys. J. Appl. Phys.

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Abstract. Since the end of the last millenium, the microelectronics industry has been facing new issues as far as CMOS devices scaling is concerned. Linear scaling will be possible in the future if new materials are introduced in CMOS device structures or if new device architectures are implemented. Innovations in the electronics history have been possible because of the strong association between devices and materials research. The demand for low voltage, low power and high performance are the great challenges for the engineering of sub 50 nm gate length CMOS devices. Functional CMOS devices in the range of 5 nm channel length have been demonstrated. The alternative architectures allowing to increase devices drivability and reduce power consumption are reviewed. The issues in the field of gate stack, channel, substrate, as well as source and drain engineering are addressed. HiK gate dielectric and metal gate are among the most strategic options to consider for power consumption and low supply voltage management. By introducing new materials (Ge, diamond/graphite carbon, HiK, . . . ), Si based CMOS will be scaled beyond the ITRS as the future System-on-Chip Platform integrating also new disruptive devices. For example, the association of C-diamond with HiK, as a combination for new functionalized Buried Insulators, will bring new ways of improving short channel effects and suppress self-heating. Because of the low parasitics required to obtain high performance circuits, alternative devices will hardly compete against logic CMOS. (Fig. 1) has accelerated the scaling of CMOS devices to lower dimensions continuously despite the difficulties that appear in device optimization. PACSHowever, uncertainties about lithography, economics and physical limitations will probably slow down the evolution. For the first time, since the introduction of poly gate in CMOS devices process, showstoppers other than lithography appear to be attracting special attention and could require some breakthrough or evolution if we want to continue scaling at the same rate. Design could also be affected by this evolution.Which are the main showstoppers for CMOS scaling? In this paper, we focus on the possible solutions and guidelines for research in the next years in order to propose solutions to enhance CMOS performance before we need to skip to alternative devices. In other words, how can we offer a second life to CMOS?To that respect, the roadmap distinguishes today three types of products: High Performance (HP) (Fig. 1), Low a e-mail: sdeleonibus@cea.fr Operating Power (LOP) and Low Standby Power (LSTP) devices. In the HP case, a historical fact will happen by the 32 nm node: the contribution of static power dissipation will become higher than the dynamic power contribution to the total power consumption! This main fact could affect the MOSFET saturation current as can be observedArticle published by EDP Sciences and available at

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“…The use of several gates has shown good electrostatic control of the channel and, therefore, the possibility of higher reduction in channel length compared to traditional bulk MOSFETs. Structures such as FINFETs, Double Gate, Tri Gate, Surrounding Gate, Omega Gate and Gate-AllAround MOSFETs are preferred to planar structures as they have a steep sub threshold voltage and reduced leakage currents for very short channel lengths [12]. Drain Induced Barrier Lowering (DIBL), threshold voltage rolloff, and off-state leakage current are greatly reduced in these devices [13,14].…”

Section: Introductionmentioning

confidence: 99%

Analytical Threshold Voltage Modeling of Surrounding Gate Silicon Nanowire Transistors with Different Geometries

Pandian¹,

Balamurugan²

2014

Journal of Electrical Engineering and Technology

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-In this paper, we propose new physically based threshold voltage models for short channel Surrounding Gate Silicon Nanowire Transistor with two different geometries. The model explores the impact of various device parameters like silicon film thickness, film height, film width, gate oxide thickness, and drain bias on the threshold voltage behavior of a cylindrical surrounding gate and rectangular surrounding gate nanowire MOSFET. Threshold voltage roll-off and DIBL characteristics of these devices are also studied. Proposed models are clearly validated by comparing the simulations with the TCAD simulation for a wide range of device geometries.

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Multiple gate devices: advantages and challenges

Cited by 116 publications

References 19 publications

Critical dimension metrology: perspectives and future trends

Critical dimension metrology: perspectives and future trends

Physical and technological limitations of NanoCMOS devices to the end of the roadmap and beyond

Analytical Threshold Voltage Modeling of Surrounding Gate Silicon Nanowire Transistors with Different Geometries

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