Multiple quantum well compressive strained heterostructures for low driving power all-optical waveguide switches

Rigo, C.; Gastaldi, L; Campi, D.; Faustini, L.; Coriasso, C.; Cacciatore, C.; Soldani, D.

doi:10.1016/s0022-0248(98)00096-7

Cited by 4 publications

(1 citation statement)

References 16 publications

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“…These materials have been grown for a specific purpose of realization of ultra-fast alloptical waveguide switches. The device characteristics have been reported elsewhere [20]. From the PL measurements, a broad transition at about 1.42 eV has been observed apart from the InAlAs transition peak and it is strongly reduced (or nearly absent) at low growth temperature (from 733K).…”

Section: Article In Pressmentioning

confidence: 90%

Chemical beam epitaxial growth of AlInAs and investigations of electrolytes for ECV profiling

Udhayasankar¹,

Kumar²,

Ramasamy³

2004

Journal of Crystal Growth

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Section: Article In Pressmentioning

confidence: 90%

Chemical beam epitaxial growth of AlInAs and investigations of electrolytes for ECV profiling

Udhayasankar¹,

Kumar²,

Ramasamy³

2004

Journal of Crystal Growth

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MOMBE: superior epitaxial growth for InP-based monolithically integrated photonic circuits

Gibis¹,

Kizuki²,

Albrecht³

et al. 2000

Journal of Crystal Growth

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X-ray standing wave studies of strained InxGa1−xAs/InP short-period superlattices

Aruta¹,

Lamberti

Gastaldi

et al. 2003

Journal of Applied Physics

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We report an x-ray standing wave (XSW) study on a set of structurally well-characterized InxGa1−xAs/InP short-period superlattices grown by metal–organic chemical vapor deposition and chemical-beam epitaxy techniques. It was possible to model the x-ray standing wave profiles only once the superlattice period has been assumed to be constituted by four layers of well-defined chemical composition [barrier (InP), first interface (InAs0.7P0.3), well (In0.53Ga0.47As), and second interface (In0.53Ga0.47As0.7P0.3)], and of variable thickness. The thickness of the four layers have been obtained by fitting the high resolution x-ray diffraction profiles of the heterostructures. The presence of partially disordered interface layers, as evidenced by a transmission electron microscopy study, causes a significant reduction of the coherent fraction, F, of both Ga and As atoms. The difference in F values among measured samples illustrates how the XSW can provide important information on the quality of semiconductor superlattices. Comparison with a “long period (160 Å)” In0.53Ga0.47As/InP superlattice, where the role played by InAs0.7P0.3 and In0.53Ga0.47As0.7P0.3 interface layers is negligible, confirms this picture. The coherent fraction of both As and Ga correlates well with the average perpendicular lattice misfit 〈Δa⊥/a〉 determined by x-ray diffraction.

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Multiple quantum well compressive strained heterostructures for low driving power all-optical waveguide switches

Cited by 4 publications

References 16 publications

Chemical beam epitaxial growth of AlInAs and investigations of electrolytes for ECV profiling

Chemical beam epitaxial growth of AlInAs and investigations of electrolytes for ECV profiling

MOMBE: superior epitaxial growth for InP-based monolithically integrated photonic circuits

X-ray standing wave studies of strained InxGa1−xAs/InP short-period superlattices

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