n-type chalcogenides by ion implantation

Abstract

Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch ¼ S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (B5-11 at.%), incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

Charge transport in pure and stabilized amorphous selenium: re-examination of the density of states distribution in the mobility gap and the role of defects

“…It is well known that chalcogenide glasses are normally p-type and very difficult to dope ntype but the success of the a-Se commercial detector was in part due to this advancement in developing a reliable nlayer. As shown recently by Curry and coworkers [13], it is indeed possible to achieve n-type doped chalcogenide glasses by suitable ion implantation; but any n-type layer fabrication process must be such that it can be used in the fabrication of a large number of large area (e.g. 24 cm 9 30 cm) panels (detectors).…”

Conversion of p–n conduction type by spinodal decomposition in Zn-Sb-Bi phase-change alloys

“…It is well known that Bi metal has been used to obtain carrier-type conversion in chalcogenide alloys, where the carrier type is sensitive to the concentration of the Bi dopant. For example, Hughes et al 13 reported n-type doping of chalcogenide glasses by ion implantation of 0.6 at% Bi into GaLaSO amorphous films, demonstrating rectification and a photocurrent in a Bi-implanted GaLaSO device. Similarly, Park et al 14 found that the carrier type changed from the native p-type in GST to the n-type in GST doped with more than~10 at% Bi.…”

Effect of the Glass Structure on Emission of Rare‐Earth‐Doped Borate Glasses

“…O VER the past decades, rare-earth (RE)-doped glasses have gained a lot of interest owing to their applications in optoelectronics, such as display devices, laser materials, sensors, optical memory devices, and optical fiber communications. [1][2][3][4][5] The optical properties of RE ions are closely related to their 4f-4f transitions, which are influenced by the variation in the glass composition. 6 Different glass compositions form different structure environments for doped RE ions.…”

“…7 However, the detailed glass structure has always been a puzzle for scientists. An interesting characteristic of the structure of borate glasses is a random distribution of BO 3 triangles and BO 4 tetrahedra, but when more of these units gather, they form well-defined and stable borate groups, such as diborate, triborate, and tetraborate, which constitute the glass networks. 8 The addition of R 2 O (where R = Li, Na, or K) to the borate glasses can notably modify the network structure and influence the optical properties of doped RE ions, forming either BO 4 units or nonbridging oxygen ions.…”