N-Type Porous Silicon Substrates for Integrated RF Inductors

Capelle, Marie; Billoue, Jérôme; Poveda, Patrick; Gautier, Gaël

doi:10.1109/ted.2011.2164078

Cited by 27 publications

(13 citation statements)

References 10 publications

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“…Porous Silicon has found many applications in microelectronics. One can point out for example, the use of mesoporous Si as an isolating substrate for RF applications [12] or the application of the high specific surface of PoSi in sensors [13].…”

Section: Fabrication Of the Porous Silicon Layersmentioning

confidence: 99%

Ultrasonic characterization of porous silicon using a genetic algorithm to solve the inverse problem

Bustillo

Fortineau

Gautier

et al. 2014

NDT & E International

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International audienceThis paper presents a method for ultrasonic characterization of porous silicon in which a genetic algorithm based optimization is used to solve the inverse problem. A one dimensional model describing wave propagation through a water immersed sample is used in order to compute transmission spectra. Then, a water immersion wide bandwidth measurement is performed using insertion/substitution method and the spectrum of signals transmitted through the sample is calculated using Fast Fourier Transform. In order to obtain parameters such as thickness, longitudinal wave velocity or density, a genetic algorithm based optimization is used.A validation of the method is performed using aluminum plates with two different thicknesses as references: a good agreement on acoustical parameters can be observed, even in the case where ultrasonic signals overlap.Finally, two samples, i.e. a bulk silicon wafer and a porous silicon layer etched on silicon wafer, are evaluated. A good agreement between retrieved values and theoretical ones is observed. Hypothesis to explain slight discrepancies are proposed

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Section: Fabrication Of the Porous Silicon Layersmentioning

confidence: 99%

Ultrasonic characterization of porous silicon using a genetic algorithm to solve the inverse problem

Bustillo

Fortineau

Gautier

et al. 2014

NDT & E International

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“…For instance, PSL can be used as sensors [1], as anodes in Lithium-ion battery [2], or in microelectronics thanks to its electrical insulating properties [3,4]. Both structural and chemical properties of PSL are key parameters in order to obtain the desired properties (Handbook of Porous Silicon, p. 202/203 [5]).…”

Section: Introductionmentioning

confidence: 99%

Porosity and thickness characterization of porous Si and oxidized porous Si layers – An ultraviolet–visible–mid infrared ellipsometry study

Fodor

Agócs

Bardet

et al. 2016

Microporous and Mesoporous Materials

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+3620 361 7876This paper suggests the evaluation of morphological parameters of porous silicon layers (PSL) using spectroscopic ellipsometry from UV to midinfrared optical range. PSL were prepared by electrochemical etching of monocrystalline silicon wafers in hydrofluoric acid-based electrolyte. Measuring with an optical and an infrared ellipsometer with a wide spectral range permits an accurate characterization of PSL properties from the top surface to the bottom of the layer with thicknesses from several hundred nanometers up to a few tens of micrometers. Several different optical models for ellipsometric evaluations were developed to determine the thickness, the average porosity, the in-depth porosity gradient, the oxidation level and the surface roughness of the PSL. Porosity was modeled with multiple effective medium layers by varying ratio of crystalline silicon, void and oxidized silicon wherever needed. Thin PSL (< 5 μm) shows no impact of current density on porosity and thickness. However, evaluation of thick PSL (20 -50 μm) highlights the in-depth porosity gradient. Thickness values were also cross-checked with electron microscopy confirming the proposed ellipsometric models. Additionally, different oxidation techniques have also been compared in terms of oxidation level and void content. Volume expansion during PSL oxidation follows exactly the same behavior as that during the oxidation of planar silicon wafers.

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“…46 If mesoporous or macroporous silicon can be suitable for RF isolation applications, some studies have proven that more complex morphologies can also be used. Indeed, Capelle and coworkers 93 present a mesoporous/ macroporous Si substrate, which is an original structure that combines the mesoporous Si smooth surface and the macroporous silicon advantages. Indeed, this material is less stressed mechanically than mesoporous Si.…”

Section: B Inductorsmentioning

confidence: 99%