Nano-cell fabrication on semiconductor utilizing self-organizational behavior of point defects induced by ion beam

“…The second step is the bottom-up migration of ion beam-induced point defects. The fabrication of ordered nanostructures containing Ge, 39) GaSb, [40][41][42][43][44][45] and InSb [46][47][48][49][50] has been attempted. However, there are limits to structure miniaturization because the ion beam diameter is large.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of ordered nanostructures on the Ge surface using electron-beam lithography and ion beam irradiation

Murao

Nitta²,

Suzuki

2020

Jpn. J. Appl. Phys.

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Ordered nanostructure fabrication was performed via a two-step process using electron-beam lithography and ion beam irradiation. In the first process, a well-focused electron-beam was used to fabricate ordered holes on an electron-beam resist-coated Ge wafer. In the second process, an ion beam was used to irradiate the entire surface to promote nanostructure growth through the migration of ion beam-induced interstitial atoms. The formation of nanostructures with a 26 nm thickness, 59 nm height, and an aspect ratio of 2.2 was achieved in 60 nm diameter holes with equal center-center distances. High aspect ratio nanostructures were formed via limited migration of interstitial atoms on the walls. An estimated 1.1% point defect was obtained by changing the volume of the nanostructures after irradiation, which contributed to the growth of the structures.

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“…Their research group performed fabrication of two-dimensional nanocell lattices on GaSb, InSb and Ge wafers by FIB at room temperature and proved that this technique is suitable for application to nano-fabrication. [34][35][36][37][38][39][40][41][42][43] In particular, it was shown that in nanocell fabrication of InSb at room temperature, it is possible to fabricate an ordered two-dimensional lattice with a 100 nm cell interval free from defects such as secondary voids and to control the aspect ratio of nanocells by ion dose. 43) In order to control the dimensions of a nanocell further, and especially to achieve small diameter nanocells, it is unavoidable to accumulate knowledge of the point defects dominating nanocell formation.…”

Section: Introductionmentioning

confidence: 99%

Effect of temperature on GaSb nanocell lattice fabrication by void formation and development utilizing a focused ion beam

Shigematsu

Morita

Yokoyama

et al. 2019

Jpn. J. Appl. Phys.

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The effect of sample temperature on GaSb nanocell fabrication using a focused ion beam was investigated. Two-dimensional nanocell lattices with a cell interval of 100 nm were fabricated on GaSb at 135 K and 293 K. It was shown that the lattice develops slowly at 135 K with increasing ion dose, and that it does so quickly at 293 K, being disturbed by newly created secondary voids. These results were discussed using the migration parameters of point defects deduced from the recovery data of electron-irradiated GaSb by [Thommen, Phys. Rev. 161, 769 (1967)].

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Nano-cell fabrication on semiconductor utilizing self-organizational behavior of point defects induced by ion beam

Cited by 8 publications

References 5 publications

Formation of Nano-structure on Semiconductor Surface by Ion Irradiation

Formation of Nano-structure on Semiconductor Surface by Ion Irradiation

Fabrication of ordered nanostructures on the Ge surface using electron-beam lithography and ion beam irradiation

Effect of temperature on GaSb nanocell lattice fabrication by void formation and development utilizing a focused ion beam

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