Nano-clusters structure and magnetic properties of high fluence Mn+ ion-implanted GaN

Chen, Di; Zhi-Bo, Ding; Yao, Shuo; Wei, Hua; Wang, Kun; Chen, Tianxiang

doi:10.1016/j.nimb.2008.03.120

Cited by 16 publications

(9 citation statements)

References 13 publications

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“…Furthermore, the remarkable number of controversial reports on the magnetic response of TM-doped GaN films [6,7,[16][17][18], increasingly recognised as being due to the undetected presence of TM-rich phases in the semiconducting host, calls for a systematic investigation of the structural properties of the material fabricated by means of different growth methods.…”

Section: Introductionmentioning

confidence: 99%

Columnar microstructure of nanocrystalline Ga1−xMnxN films deposited by reactive sputtering

Leite

Devillers

et al. 2011

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Columnar microstructure of nanocrystalline Ga1−xMnxN films deposited by reactive sputtering

Leite

Devillers

et al. 2011

Journal of Crystal Growth

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“…[1][2][3] Despite this attention, experimental investigations of the magnetic behavior have as yet failed to find a single accepted magnetic character in Ga 1−x Mn x N, variously reporting paramagnetism, 4,5 ferromagnetism, 6-8 superparamagnetism, 9 or antiferromagnetism [10][11][12] in thin films or crystals prepared with Mn concentrations with 0.0001Ͻ x Ͻ 0.075. In the films exhibiting ferromagnetic behavior, Curie temperatures range from ϳ10 K ͑Refs.…”

Section: Introductionmentioning

confidence: 99%

Nearest-neighbor Mn antiferromagnetic exchange inGa1−xMnxN

et al. 2010

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We analyze the magnetic behavior of well-characterized, precipitate-free Ga 1−x Mn x N thin films containing Mn at higher levels than previously attained; up to x = 0.36. This level is above the percolation threshold x c for nearest-neighbor cations, such that exchange between nearest neighbors will dominate the magnetic response. The susceptibility decreases as the Mn content increases up to and beyond x c , as an increasing fraction of the Mn experiences antiferromagnetic exchange. The dominance of antiferromagnetic behavior at higher Mn concentrations and the total lack of evidence for ferromagnetic ordering even above x c demonstrates that the nature of the exchange between Mn 2+ ions in GaN is antiferromagnetic.

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“…The different experimental magnetic behaviors, such as the paramagnetism [2], ferromagnetism [3,4], and superparamagnetism [5], are observed and discussed.…”

mentioning

confidence: 98%

Nitrogen vacancy effects on the ferromagnetism of Mn doped GaN films

Man

Liu

et al. 2012

Appl. Phys. A

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The amorphous gallium nitride thin films doped with Mn were deposited by Laser assisted Molecular Beam Epitaxy (LMBE). After annealing at different NH 3 flow rates, the high-quality GaMnN crystalline films with different concentration of nitrogen vacancies (V N ) were obtained, which were confirmed by the X-ray diffraction spectroscopy and Raman measurements. The magnetic behaviors of these films were also obtained to investigate the effects of nitrogen vacancies. It indicates that V N play a significant role in the origin of ferromagnetism. The stronger room-temperature ferromagnetism is given with the higher V N concentration when it is not beyond a critical concentration. Moreover, from our M(T ) curves and Raman analysis, the films present high resistivity. The magnetism of films with high resistivity varies with concentration of nitrogen vacancies, which can be explained by the bound magnetic polarons (BMP) theory.

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Nano-clusters structure and magnetic properties of high fluence Mn+ ion-implanted GaN

Cited by 16 publications

References 13 publications

Columnar microstructure of nanocrystalline Ga1−xMnxN films deposited by reactive sputtering

Columnar microstructure of nanocrystalline Ga1−xMnxN films deposited by reactive sputtering

Nearest-neighbor Mn antiferromagnetic exchange inGa1−xMnxN

Nitrogen vacancy effects on the ferromagnetism of Mn doped GaN films

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