Composition in amorphous Si1−xCx:H heteroepitaxial thin films on Si (100) by plasma enhanced chemical vapour deposition (PECVD) is analysed. The unknown x (0.45-0.57) and the depth profile of hydrogen in the thin films are characterized by Rutherford backscattering spectrum (RBS), resonance-nuclear reaction analysis (R-NRA) and elastic recoil detection (ERD), respectively. In addition, the depth profile of hydrogen in the unannealed thin films is compared to that of the annealed thin films with rapid thermal annealing (RTA) or laser spike annealing (LSA) in nitrogen atmosphere. The results indicate that the stoichiometric amorphous SiC can be produced by PECVD when the ratio of CH4/SiH4 is approximately equal to 25. The content of hydrogen decreases suddenly from 35% to 1% after 1150 • C annealing. RTA can reduce hydrogen in SiC films effectively than LSA.

The structural, optical, and magnetic properties of Cu-implanted GaN films have been investigated. No secondary phase was found within the resolution limit of the instrument but the lattice defects such as vacancies were present in the film. Room temperature ferromagnetism was observed with saturation magnetization of 0.3μB/Cu atom. The field-cooled magnetization curves can be well fitted by a Curie-Weiss model and a standard three-dimensional spin-wave model in the low and high temperature ranges, respectively. Our findings indicate that the vacancylike defects should be considered in understanding the observed magnetic properties of the Cu-implanted GaN films.

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The samples of InGaN/GaN multiple quantum wells (MQWs) have been grown on (0001) sapphire substrate with n-GaN buffer layer by metal-organic chemical vapor deposition (MOCVD). According to the results of Rutherford backscattering (RBS)/channeling along 〈0001〉 axis, the conventional θ—2θ scans normal to GaN (0004) and (1014) plane at 0° and 180° azimuth angles and the photoluminescence (PL) properties at room temperature, we concluded that In atoms in the InGaN/GaN MQWs are highly substituted, with the substitution rate over 99%, and the average crystal lattice constants of InGaN/GaN MQWs were calculated accurately (aepi=0.3195nm，cepi=0.5198nm), which are almost equal to theoretical data. Using HRXRD and RBS,the atomic content of In was determined to be respectively 0.023 and 0.026, the result was consistent with actual growth conditions of InGaN/GaN MQWs. However,there was a great difference compared with In chemical composition obtained by PL properties, which shows that PL properties are not suitable for measuring the In chemical composition in InGaN/GaN MQWs.

The diffusion barrier effect of Pt has been investigated in Ti/Al/Pt/Au ohmic contacts to n-GaN. Severe indiffusion, outdiffusion of Pt and outdiffusion of Ga have been found in 450 • C annealed samples according to the Rutherford backscattering spectrometry (RBS) results. At the same time, the reaction between Ga and Pt has also been identified by glancing angle synchrotron irradiation x-ray diffraction (GASIXRD) in the samples annealed at 450 • C. A higher annealing temperature causes Pt to indiffuse into GaN and react with GaN further. As a result, electrical degradation of the Ti/Al/Pt/Au metallization system was found for samples aged at 600 • C. In contrast, no obvious degradation was found for the aged Ti/Al/Ni/Au samples. According to the RBS and GASIXRD results, it is suggested that the formation of Ga 3 Pt 5 may cause degradation in the electrical properties of the Ti/Al/Pt/Au metallization system.