2017
DOI: 10.1142/s0218126617502012
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Nano-Scale Silicon Quantum Dot-Based Single-Electron Transistors and Their Application to Design of Analog-to-Digital Convertors at Room Temperature

Abstract: Room-temperature analog-to-digital converters (ADCs) based on nanoscale silicon (Si) quantum dot (QD)-based single-electron transistors (SETs) can be very attractive for high-speed processors embedded in future generation nanosystems. This paper focuses on the design and modeling of advanced single-electron converters suited for operation at room temperature. In contrast to conventional SETs with metallic QD, the use of sub-10-nm Si QD results in stable operation at room temperature, as the observable Coulomb … Show more

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Cited by 3 publications
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“…The fundamental physical principle of SETs is the tunneling effect through a Coulomb blockade [2][3][4]. The number of electrons inside the quantum dot is precisely controlled by the Coulomb blockade, thus, SETs show I-V characteristic curves that can exhibit Negative Differential Resistance (NDR) regions, which are expected to have new functionalities [5][6][7][8][9][10]. Theoretical investigation about the origin of NDRs has been reported in previous works [11][12][13].…”
Section: Introductionmentioning
confidence: 99%
“…The fundamental physical principle of SETs is the tunneling effect through a Coulomb blockade [2][3][4]. The number of electrons inside the quantum dot is precisely controlled by the Coulomb blockade, thus, SETs show I-V characteristic curves that can exhibit Negative Differential Resistance (NDR) regions, which are expected to have new functionalities [5][6][7][8][9][10]. Theoretical investigation about the origin of NDRs has been reported in previous works [11][12][13].…”
Section: Introductionmentioning
confidence: 99%