Nano-Scale Stress Field Evaluation with Shallow Trench Isolation Structure Assessed by Cathodoluminescence, Raman Spectroscopy, and Finite Element Method Analyses

Kodera, Masahito; Iguchi, Tadashi; Tsuchiya, N.; Tamura, Masataka; Kakinuma, Shigeru; Naka, N.; Kashiwagi, Shinsuke

doi:10.7567/ssdm.2007.c-10-2

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Cathodoluminescence (CL) spectroscopy, based on a CL emission from a specimen by electron beam (EB) irradiation, is typically used to obtain information on the impurity [ 7 ] and dislocation [ 8 ] in ceramics. Recently, several researchers have used CL as a stress analysis tool because they have found that some of the CL spectral parameters are sensitive to stress in a specimen [ 9 , 10 , 11 ]. If CL spectroscopy is a non-destructive method for stress analysis, it will become a strong candidate as a tool for stress analysis of ceramics and oxides.…”

Section: Introductionmentioning

confidence: 99%

Cathodoluminescence Spectroscopic Stress Analysis for Silicon Oxide Film and Its Damage Evaluation

et al. 2020

Self Cite

View full text Add to dashboard Cite

We describe the stress analysis of silicon oxide (SiO2) thin film using cathodoluminescence (CL) spectroscopy and discuss its availability in this paper. To directly measure the CL spectra of the film under uniaxial tensile stresses, specially developed uniaxial tensile test equipment is used in a scanning electron microscope (SEM) equipped with a CL system. As tensile stress increases, the peak position and intensity proportionally increase. This indicates that CL spectroscopy is available as a stress measurement tool for SiO2 film. However, the electron beam (EB) irradiation time influences the intensity and full width at half maximum (FWHM), which implies that some damage originating from EB irradiation accumulates in the film. The analyses using Raman spectroscopy and transmission electron microscopy (TEM) demonstrate that EB irradiation for stress measurement with CL induces the formation of silicon (Si) nanocrystals into SiO2 film, indicating that CL stress analysis of the film is not nondestructive, but destructive inspection.

show abstract