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We describe the stress analysis of silicon oxide (SiO2) thin film using cathodoluminescence (CL) spectroscopy and discuss its availability in this paper. To directly measure the CL spectra of the film under uniaxial tensile stresses, specially developed uniaxial tensile test equipment is used in a scanning electron microscope (SEM) equipped with a CL system. As tensile stress increases, the peak position and intensity proportionally increase. This indicates that CL spectroscopy is available as a stress measurement tool for SiO2 film. However, the electron beam (EB) irradiation time influences the intensity and full width at half maximum (FWHM), which implies that some damage originating from EB irradiation accumulates in the film. The analyses using Raman spectroscopy and transmission electron microscopy (TEM) demonstrate that EB irradiation for stress measurement with CL induces the formation of silicon (Si) nanocrystals into SiO2 film, indicating that CL stress analysis of the film is not nondestructive, but destructive inspection.

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In this study, we developed a novel strain measurement technique for electrochemically aligned collagen (ELAC) fibres using second harmonic generation (SHG) microscopy. The ELAC fibres were prepared by a typical electrochemical method and were subjected to cross-linking. For comparison with natural collagen fibres, polarization dependency of the prepared ELAC fibres and that of a human Achilles' tendon were evaluated. The results showed that, because of crosslinking, the ELAC fibres exhibit polarization dependency similar to that of the tendon but only in a region close to the tendon. The relationship between SHG and the applied strain was determined by a combination of SHG microscopy and tensile tests. The SHG from the ELAC fibres changed in the high strain region because of the applied stress.