Nanocomposite-like structure in an epitaxial CaCu3Ti4O12 film on LaAlO3 (001)

Jiang, J. C.; Meletis, Efstathios I.; Chen, C. L.; Lin, Yuan; Zhang, Z.; Chu, W. K.

doi:10.1080/09500830410001726996

Cited by 13 publications

(9 citation statements)

References 12 publications

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“…Perovskite-like CaCu 3 Ti 4 O 12 (CCTO) with its ultra-high and stable dielectric constant over a broad frequency range from 0 Hz to 1 MHz in the temperature range of 100~600 K has been considered as a promising dielectric material candidate for various capacitance device applications56. The ultra-high dielectric constants of CCTO films are normally considered to be the results of the internal barrier layer capacitors (IBLC) consisting of semiconducting grains and insulating grain boundaries7891011. To further understand the nature of this material for practical device applications, it is necessary to systematically study the relationship between the physical properties and the atomic microstructures in high quality CCTO thin films with feasible ways to manipulate their physical properties.…”

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confidence: 99%

Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates

Yao

Gao

et al. 2016

Sci Rep

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Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu3Ti4O12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications.

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confidence: 99%

Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates

Yao

Gao

et al. 2016

Sci Rep

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“…The loss of the CCTO films might be caused from voids and/or second phase (interface between the two grains with different grain size). Jiang et al [8] also estimated that the grain boundary or domain boundary inside the CCTO films play a key role in their dielectric properties. More analyses of the effects of pore diameter, grain size, and film thickness on the dielectric properties are still under investigation.…”

Section: Electrical Propertiesmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

“…In order to apply CCTO in microelectronic devices and give a more fundamental understanding of its physical property, some groups have grown CCTO films by pulsed-laser deposition (PLD) with different substrates [8,9]. In the work of Jiang et al, high quality epitaxial CCTO films were prepared on a (001)-oriented LaAlO 3 substrate and presented a high dielectric constant of 10 4 at 1 MHz at room temperature [8]. While in the studies of Fang and Shen, the CCTO thin film deposited on Pt/Ti/SiO 2 /Si substrates showed a polycrystalline characteristic and achieved a dielectric constant of near 2000 at 10 kHz and room temperature [9,10].…”

Section: Introductionmentioning

confidence: 99%

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Thickness-dependent microstructures and electrical properties of CaCu3Ti4O12 films derived from sol–gel process

Chang

Lee

et al. 2007

Thin Solid Films

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“…Various efforts on the film/heterostructure fabrication and integration have been addressed in the past few years for their significant prospects in a wide range of applications. As a result of the extensive research in the area, a wide variety of oxide thin films and heterostructure such as ferromag- 166 and PbTiO 3 /SrTiO3 superlattices 167 have been successfully achieved.…”

Section: B New Techniques and Heterostructuresmentioning

confidence: 99%

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

Subramanyam¹,

Cole²,

Sun³

et al. 2013

Journal of Applied Physics

147

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There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges. V C 2013 AIP Publishing LLC.

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Nanocomposite-like structure in an epitaxial CaCu₃Ti₄O₁₂ film on LaAlO₃ (001)

Cited by 13 publications

References 12 publications

Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates

Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates

Thickness-dependent microstructures and electrical properties of CaCu3Ti4O12 films derived from sol–gel process

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

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