Nanocrystal Formation of Metals in Thermally Grown Thin Silicon Dioxide Layer by Ion Implantation and Thermal Diffusion of Implanted Atoms in Heat Treatment

Arai, Nobutoshi; Tsuji, Hiroshi; Gotoh, Naoyuki; Minotani, Takashi; Ishibashi, Toyotsugu; Adachi, Kouichiro; Kotaki, Hiroshi; Gotoh, Yasuhito; Ishikawa, Junzo

doi:10.1088/1742-6596/61/1/009

Cited by 3 publications

(1 citation statement)

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“…For instance, it was shown that Ag ions dissolved in glass, prepared by the mixture of glass frit with Ag paste, diffuses out 45 – 47 . Further, in the case of an ion implanted SiO 2 film, it was observed that AgNPs precipitated in the SiO 2 at a deeper level than the implanted range after annealing at 500 °C 48 , 49 . Actually, AgNPs were found inside the SiO 2 at a distance of several tens of nanometres from the SiO 2 /Ag interface for the SiO 2 joint (Supplementary Fig.…”

Section: Discussionmentioning

confidence: 99%

Silver oxide decomposition mediated direct bonding of silicon-based materials

Matsuda

Inami

Motoyama

et al. 2018

Sci Rep

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Silicon-based materials are widely promising electronic components by the combination with metals in power electronics field. However, bonding metal and silicon-based materials generally requires specific surface modification due to their different chemical bonds. Here, we demonstrate a process for directly bonding metals to silicon-based materials that does not require surface treatment, based on the in situ decomposition of Ag2O paste, forming Ag nanoparticles (AgNPs). We demonstrate sound joints of Ag/silicon-based materials at 300–500 °C with the formation of a silicon oxide interlayer containing AgNPs. We propose that Ag in the interlayer attracted other Ag particles to the interface, playing a unique role in this direct bonding process. This process is suitable for various bonding applications in electronics, as well the fabrication of conducting paths for photovoltaic and other applications.

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