Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

Abstract

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Influence of Nitrogen Adsorption of Doped Ta on Characteristics of SiNx‐Based Resistive Random Access Memory

“…In some studies on SiN x ‐based RRAM, it is considered that the Si dangling bonds (DBs) in the SiN x film form conductive path and dominate the resistive switching of the device . Better resistance characteristics or more stable devices can be obtained by adjusting the value of x in SiN x .…”

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

“…[9][10][11][12][13][14][15] Among them, Si 3 N 4 is considered one of the most interesting resistive-switching materials thanks to its abundant defects, which play an important role in resistive switching. [16][17][18][19][20][21][22][23][24] Furthermore, Si 3 N 4 -based RRAM has numerous merits of fast switching speed, low switching current, strong endurance, good retention, full compatibility to conventional Si CMOS processing, and capability of both unipolar and bipolar switching modes. [16][17][18][19][20][21][22] For realization of the high-density crossbar array configuration, sneak current which leads to read-out errors should be suppressed.…”

“…[16][17][18][19][20][21][22][23][24] Furthermore, Si 3 N 4 -based RRAM has numerous merits of fast switching speed, low switching current, strong endurance, good retention, full compatibility to conventional Si CMOS processing, and capability of both unipolar and bipolar switching modes. [16][17][18][19][20][21][22] For realization of the high-density crossbar array configuration, sneak current which leads to read-out errors should be suppressed. 25 In order to resolve the problem of sneak current, linkage of the individual memory cell and a nonlinear access device is required.…”

“…1(a). 17,21 Finally, Ni top electrode (TE) with a thickness of 100 nm was deposited by a thermal evaporator and patterned by shadow mask containing circular patterns with 100-µm diameter. All the electrical properties were characterized by the DC voltage sweep mode and the pulse mode using Keithley 4200-SCS semiconductor parameter analyzer (SPA) and 4225-PMU ultra-fast I-V module at room temperature, respectively.…”

“…Si pathways can be formed and broken by controlling the applied electric field across the Si 3 N 4 layer for low-resistance state (LRS) and high-resistance state (HRS), respectively. [16][17][18][19][20][21][22][23][24] For unipolar resistive switching, the bias is swept keeping the same polarity in the negative region. The electroforming step (the first set process) is required with compliance current (I COMP ) to switch the RRAM cell from the initial state to the LRS.…”