Nanofabrication by electron beam lithography and its applications: A review

Chen, Yifang

doi:10.1016/j.mee.2015.02.042

Cited by 616 publications

(335 citation statements)

References 102 publications

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“…The pattern commonly serves as a mask for lift-off/etching procedures or is used as a template for nanoimprinting. Various kinds of resists have been developed to meet specific applications [46,47] with the recent addition of silk [45,48] as a bio-compatibile and bio-degradable material.…”

Section: Focused Electron Beams: Towards 3d Nanostructuresmentioning

confidence: 99%

Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies

et al. 2017

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The evolution of optical microscopy from an imaging technique into a tool for materials modification and fabrication is now being repeated with other characterization techniques, including scanning electron microscopy (SEM), focused ion beam (FIB) milling/imaging, and atomic force microscopy (AFM). Fabrication and in situ imaging of materials undergoing a three-dimensional (3D) nano-structuring within a 1−100 nm resolution window is required for future manufacturing of devices. This level of precision is critically in enabling the cross-over between different device platforms (e.g. from electronics to micro-/ nano-fluidics and/or photonics) within future devices that will be interfacing with biological and molecular systems in a 3D fashion. Prospective trends in electron, ion, and nano-tip based fabrication techniques are presented.

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Section: Focused Electron Beams: Towards 3d Nanostructuresmentioning

confidence: 99%

Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies

et al. 2017

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“…Advances in self-assembling chemical processes, lithographic methods involving accelerating ions and particles, and high-precision deposition and etch techniques have enabled much of this fabrication progress. [1][2][3][4][5] These advances will enable new and exciting technologies that take advantage of properties, such as increased surface area at the nanoscale, high-density arrays of structures, and even Angstrom-scale features or gaps (also referred to as slits) among structures. [6][7][8][9] High-precision nanofabrication may produce a wide range of structures that are beneficial for their chemical, mechanical, electrical, optical, or combined properties across nearly endless applications.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and analysis of metallic nanoslit structures: advancements in the nanomasking method

Bauman

Darweesh

Debu

et al. 2018

J. Micro/Nanolith. MEMS MOEMS

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, "Fabrication and analysis of metallic nanoslit structures: advancements in the nanomasking method," J. Micro/Nanolith. MEMS MOEMS 17(1), 013501 (2018), doi: 10.1117/1.JMM.17.1.013501. Abstract. This work advances the fabrication capabilities of a two-step lithography technique known as nanomasking for patterning metallic nanoslit (nanogap) structures with sub-10-nm resolution, below the limit of the lithography tools used during the process. Control over structure and slit geometry is a key component of the reported method, exhibiting the control of lithographic methods while adding the potential for mass-production scale patterning speed during the secondary step of the process. The unique process allows for fabrication of interesting geometric combinations such as dual-width gratings that are otherwise difficult to create with the nanoscale resolution required for applications, such as nanoscale optics (plasmonics) and electronics. The method is advanced by introducing a bimetallic fabrication design concept and by demonstrating blanket nanomasking. Here, the need for the secondary lithography step is eliminated improving the mass-production capabilities of the technique. Analysis of the gap width and edge roughness is reported, with the average slit width measured at 7.4 AE 2.2 nm. It was found that while no long-range correlation exists between the roughness of either gap edge, and there are ranges in the order of tens of nanometers over which the slit edge roughness is correlated or anticorrelated across the gap. This work helps quantify the nanomasking process, which aids in future fabrications and leads toward the development of more accurate computational models for the optical and electrical properties of fabricated devices. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 UnportedLicense. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…Due to the emission properties of most semiconductor quantum dots, such processing has to be performed at low cryogenic temperatures or even liquid helium (l-He) temperature for sufficient signal-to-noise ratio 6 . Naturally, EBL is the most attractive technique to fabricate very precise or even three dimensional device structures with flexible design [7][8][9][10] . This initiates the quest for a detailed understanding of low-temperature-capable electron-beamsensitive resists 11 .…”

Section: Introductionmentioning

confidence: 99%

CSAR 62 as negative-tone resist for high-contrast e-beam lithography at temperatures between 4 K and room temperature

Kaganskiy¹,

Heuser²,

Schmidt³

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The temperature dependence of the electron-beam sensitive resist CSAR 62 is investigated in its negative-tone regime. The writing temperatures span a wide range from 4 K to room temperature with the focus on the liquid helium temperature regime. The importance of low temperature studies is motivated by the application of CSAR 62 for deterministic nanophotonic device processing by means of in-situ electron-beam lithography. At low temperature, CSAR 62 exhibits a high contrast of 10.5 and a resolution of 49 nm. The etch stability is almost temperature independent and it is found that CSAR 62 does not suffer from peeling which limits the low temperature application of the standard electron-beam resist PMMA. As such, CSAR 62 is a very promising negative-tone resist for in-situ electron-beam lithography of high quality nanostructures at low temperature.

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Nanofabrication by electron beam lithography and its applications: A review

Cited by 616 publications

References 102 publications

Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies

Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies

Fabrication and analysis of metallic nanoslit structures: advancements in the nanomasking method

CSAR 62 as negative-tone resist for high-contrast e-beam lithography at temperatures between 4 K and room temperature

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