Nanoimprint lithography and future patterning for semiconductor devices

Higashiki, Tatsuhiko; Nakasugi, Tetsuro; Yoneda, Ikuo

doi:10.1117/1.3658024

Cited by 66 publications

(38 citation statements)

References 17 publications

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“…UV-NIL has a strong potential for application in production of large-scale integrated circuits and patterned media [5][6][7][8]. Bubble-free filling is an important issue to achieve highthroughput mass production using UV-NIL.…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet Nanoimprint Lithography in the Mixture of Condensable Gases with Different Vapor Pressures

Suzuki

Youn

Hiroshima

2016

J. Photopol. Sci. Technol.

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UV nanoimprint lithography (UV-NIL) in condensable gases such as pentafluoropropane (PFP) has been recognized as one of the most promising methods to realize bubble-defect-free UV-NIL with low demolding forces when compared with that in ambient air and He. We have recently studied two condensable gases [trans-1-chloro-3,3,3-trifluoropropene (CTFP) and trans-1,3,3,3-tetrafluoropropene (TFP)] with different vapor pressures and low global warming potentials (GWP) of <6. However, the resulting lithographic pattern quality in UV-NIL remains unclear using CTFP and TFP. In this work, the surface roughness of patterns fabricated using UV-NIL in the CTFP and TFP gases was investigated. In UV-NIL in a CTFP/TFP atmosphere, with an increase in the TFP fraction, the surface roughness decreased. It was also found that the linewidth of tens of nanometer size patterns can be linearly controlled by adjusting the CTFP/TFP fraction; for 70-nm-wide line patterns, the linewidth adjusting ratio was approximately 14%.

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Section: Introductionmentioning

confidence: 99%

Ultraviolet Nanoimprint Lithography in the Mixture of Condensable Gases with Different Vapor Pressures

Suzuki

Youn

Hiroshima

2016

J. Photopol. Sci. Technol.

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“…[1][2][3] S-FIL has a strong advantage over extreme ultraviolet (EUV) and other proposed optical lithography processes in terms of cost of ownership. 4,5 This is because there is no need for costly optics and an expensive light source.…”

Section: Introductionmentioning

confidence: 99%

Planarizing material for reverse-tone step and flash imprint lithography

Ogawa

Jacobsson

Deschner

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Reverse-tone step and flash imprint lithography (S-FIL/R) requires materials that can be spin-coated onto patterned substrates with significant topography and that are highly planarizing. Ideally, these planarizing materials must contain silicon for etch selectivity, be UV or thermally curable, and have low viscosity and low volatility. One such unique material, in particular, a branched and functionalized siloxane (Si-12), is able to adequately satisfy the above requirements. This paper describes a study of the properties of epoxy functionalized Si-12 (epoxy-Si-12) as a planarizing layer. An efficient synthetic route to epoxy-Si-12 was successfully developed, which is suitable and scalable for an industrial process. Epoxy-Si-12 has a high silicon content (30.0%), low viscosity (29 cP at 25°C), and low vapor pressure (0.65 Torr at 25°C). A planarizing study was carried out using epoxy-Si-12 on trench patterned test substrates. The material showed excellent planarizing properties and met the calculated critical degree of planarization (critical DOP), which is a requirement for a successful etch process. An S-FIL/R process using epoxy-Si-12 was demonstrated using an Imprio® 100 (Molecular Imprints Inc., Austin, Texas) imprint tool. The results indicate that epoxy-Si-12 works very well as a planarizing layer for S-FIL/R.

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“…However, reproducibility of imprinting results can be generally very good today. For instance, in a 2011 study [9] of commercial step-and-repeat equipment by Molecular Imprints, 20 imprints were done on a wafer resulting in a total of 240 measurements. The critical dimension uniformity was 1.2 nm 3-sigma.…”

Section: Nanoimprinted Polymer Waveguidesmentioning

confidence: 99%

“…In the earlier studies, the roughness of the bottom and top surfaces of the imprinted waveguides structures was very small, in the order of 1 -2 nm. [9][11] However, the roughness of the vertical walls of the waveguide cores is typically slightly higher and was estimated to be on the order of 4 nm. [12] Figure 8.…”

Section: Characterizationmentioning

confidence: 99%

Multilayer single-mode polymeric waveguides by imprint patterning for optical interconnects

et al. 2014

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Low-loss single-mode waveguides are fabricated for optical interconnection applications. Such waveguides operating at telecom wavelength window are attractive for communicating between micro-photonic integrated circuit chips, such as silicon photonics, on the carrier/package, and also for enhanced coupling of photonic devices to fibers for longer reach interconnects. Manufacturing of the waveguides is based on direct pattering of optical polymeric materials by UV nanoimprinting. The advantages of the technology include the applicability to stack multiple layers of waveguides, fabrication on various substrate materials, and simultaneous fabrication of optical coupling structures. The developed process enables high wafer-level yield with precision overlay alignment. The multilayer waveguides were implemented using the so-called inverted rib waveguide process, that is, the shape of the waveguide cores are imprinted on the undercladding layer as grooves and then the core material is deposited on the cladding layer filling the grooves and also forming a thin slab layer. The subsequent deposition of the upper cladding layer finalizes the first waveguide layer and also starts the manufacturing of the next waveguide layer. The achieved wafer-scale layer-to-layer alignment tolerances were 1...2 µm and <0.3 µm in horizontal and vertical directions, respectively. Losses measured from the long waveguide spirals made of commercial ORMOCER materials on silicon wafers were 0.35 dB/cm at 1305 nm and 0.86 dB/cm at 1530 nm, which are only around 0.15 dB/cm higher than the material losses.

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Nanoimprint lithography and future patterning for semiconductor devices

Cited by 66 publications

References 17 publications

Ultraviolet Nanoimprint Lithography in the Mixture of Condensable Gases with Different Vapor Pressures

Ultraviolet Nanoimprint Lithography in the Mixture of Condensable Gases with Different Vapor Pressures

Planarizing material for reverse-tone step and flash imprint lithography

Multilayer single-mode polymeric waveguides by imprint patterning for optical interconnects

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