2004
DOI: 10.1116/1.1771665
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Nanoimprint lithography in the cyclic olefin copolymer, Topas®, a highly ultraviolet-transparent and chemically resistant thermoplast

Abstract: Thermal nanoimprint lithography (NIL) of the cyclic olefin copolymeric thermoplast Topas® is demonstrated. Topas® is highly UV-transparent, has low water absorption, and is chemically resistant to hydrolysis, acids and organic polar solvents which makes it suitable for lab-on-a-chip applications. In particular, Topas® is suitable for micro systems made for optical bio-detection since waveguides for UV-light can be made directly in Topas®. In this article full process sequences for spin coating Topas® onto 4 in… Show more

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Cited by 67 publications
(40 citation statements)
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“…Thermal imprint was performed in PMMA (MicroChem Corp., 50 k PMMA dissolved in pure anisole to give a 30 wt% solution) which is a well known thermoplastic polymer introduced for NIL by Chou et al in their pioneering work [9]. PMMA has a water absorption of 0.3% [21], a glass transition temperature of T g = 105…”
Section: Fabricationmentioning
confidence: 99%
“…Thermal imprint was performed in PMMA (MicroChem Corp., 50 k PMMA dissolved in pure anisole to give a 30 wt% solution) which is a well known thermoplastic polymer introduced for NIL by Chou et al in their pioneering work [9]. PMMA has a water absorption of 0.3% [21], a glass transition temperature of T g = 105…”
Section: Fabricationmentioning
confidence: 99%
“…The hydrogenation step is necessary for increasing the thermal stability of the plastic by removing carbon-carbon double bonds that are necessarily formed during the polymerisation process. [6][7][8] Although there exist poly(cyclic olefins) that contain ethers, esters and aromatic groups, a number of commercial poly-(cyclic olefins) are saturated hydrocarbons. Consequently, it is difficult to introduce suitable functional groups at the surface of these chemically inert plastics which are expected to have a low intrinsic fluorescence background.…”
Section: Surface Chemistry and Immobilization Of Dna On Poly(cyclic Omentioning
confidence: 99%
“…The nanoimprinted patterns are transferred into the top 320 nm thick silicon layer of a SOI substrate by using an optimized SF 6 -based inductively coupled plasma (ICP) etch. The etch selectivity of silicon over mr-I T85 is 9:1 (Silicon:mr-I T85) [4] which allows for pattern transfer of the imprinted holes through the device silicon layer of the SOI substrate. The lithographic result of our imprint process is compared to devices fabricated by direct electron beam writing of the etch mask.…”
Section: Nanoimprint Lithography Of Topology Optimizedmentioning
confidence: 99%