Nanoimprint stamps with ultra-high resolution: Optimal fabrication techniques

Graczyk, Mariusz; Cattoni, Andréa; Rösner, Benedikt; Seniutinas, Gediminias; Löfstrand, Anette; Kvennefors, Anders; Mailly, D.; Dávid, Christian; Maximov, Ivan

doi:10.1016/j.mee.2018.01.008

Cited by 9 publications

(8 citation statements)

References 13 publications

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“…Figure 4 a.1) and a.2) were taken at opposite edges of the wafer, with a distance of 40 mm, to access the demoulding quality. An imperfect demoulding process leads to elongation in a particular direction 34 . Figure 4 a.1) and a.2) show clearly defined circular point contacts, with no deformation, and an average dimension of 420 ± 12 nm.…”

Section: Patterned Substrates Characterisationmentioning

confidence: 99%

“…Before the imprint, the hexagonal array contact pattern was transferred from a 100 mm nickel stamp to an Intermediate Polymer Stamp (IPS ®) by UV-NIL. The use of IPS® extends the initial stamp lifetime and enables to work with UV for non-transparent substrates and moderate pressures 33,34 . A UV-NIL process was conducted to transfer the pattern to the IPS®, in a NanoImprint Eitre 6 system (Obducat AB).…”

Section: Slg Based Substrates Lithographymentioning

confidence: 99%

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Cu(In,Ga)Se2 based ultrathin solar cells: the pathway from lab rigid to large scale flexible technology

Lopes

Teixeira

Curado

et al. 2022

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For the first time, the incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 (CIGS) based solar cells is shown in a flexible lightweight stainless-steel substrate. The fabrication was based on an industry scalable lithography technique - nanoimprint lithography (NIL) - for a 15x15 cm2 dielectric layer patterning, needed to reduce optoelectronic losses at the rear interface. The nanopatterning schemes are usually developed by lithographic techniques or by processes with limited scalability and reproducibility (nanoparticle lift-off, spin-coating, etc). However, in this work the dielectric layer is patterned using NIL, a low cost, large area, high resolution, and high throughput technique. To assess the NIL performance, devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. Up to now, EBL is considered the most reliable technique for patterning laboratory samples. The device patterned by NIL shows similar light to power conversion efficiency average values compared to the EBL patterned device - 12.6 % vs 12.3 %, respectively - highlighting the NIL potential for application in the solar cell sector. Moreover, the impact of the lithographic processes, such as different etch by-products, in the rigid solar cells’ figures of merit were evaluated from an elemental point of view via X-ray Photoelectron Spectroscopy and electrically through a Solar Cell Capacitance Simulator (SCAPS) fitting procedure. After an optimised NIL process, the device on stainless-steel achieved an average power conversion efficiency value of 11.7 % - a slightly lower value than the one obtained for the rigid approach, due to additional challenges raised by processing and handling steel substrates, even though scanning transmission electron microscopy did not show any clear evidence of impurity diffusion towards the absorber. Notwithstanding, time-resolved photoluminescence results strongly suggested the presence of additional non-radiative recombination mechanisms in the stainless-steel absorber, which were not detected in the rigid solar cells, and are compatible with elemental diffusion from the substrate. Nevertheless, bending tests on the stainless-steel device demonstrated the mechanical stability of the CIGS-based device up to 500 bending cycles.

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Section: Patterned Substrates Characterisationmentioning

confidence: 99%

Section: Slg Based Substrates Lithographymentioning

confidence: 99%

Cu(In,Ga)Se2 based ultrathin solar cells: the pathway from lab rigid to large scale flexible technology

Lopes

Teixeira

Curado

et al. 2022

Preprint

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“…Here the OrmoStamp (micro resist technology GmbH, Dortmund, Germany, n ≈ 1.5) [49][50][51], an ultraviolet-curable acrylic liquid medium with a viscosity of 0.41 Pa•s and a dielectric constant of about 6.8 at room temperature, has been used to prepare the moth-eye nanostructure. In detail, we place the 4 × 4 cm 2 silicon template with moth-eye nanostructure etched by electron beam in a vacuum dryer with a pressure of 10 mbar and a volume of 8 L, and add 80 uL FOTS and keep for 30 min to fully volatilize.…”

Section: Fabrication Of Moth-eye On the Devicementioning

confidence: 99%

“…In this work, the OrmoStamp was first used to fabricate a moth-eye anti-reflector by nano-imprinting to enhance the J SC and PCE of CsPbIBr 2 PSCs by attaching it on the glass side of device [49][50][51]. The OrmoStamp was an inorganic-organic hybrid polymer for fabricating transparent stamps in nanoimprint lithography, which has advantages of excellent mechanical and flexible properties, ultra-high resolution capabilities (sub-10 nm), high transparency for UV and visible light, high chemical and physical stability, moderate volume shrinkage during cross-linking, and long stamp lifetime [52,53].…”

Section: Introductionmentioning

confidence: 99%

Performance Enhancement of All-Inorganic Carbon-Based CsPbIBr2 Perovskite Solar Cells Using a Moth-Eye Anti-Reflector

et al. 2021

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All-inorganic carbon-based CsPbIBr2 perovskite solar cells (PSCs) have attracted increasing interest due to the low cost and the balance between bandgap and stability. However, the relatively narrow light absorption range (300 to 600 nm) limited the further improvement of short-circuit current density (JSC) and power conversion efficiency (PCE) of PSCs. Considering the inevitable reflectance loss (~10%) at air/glass interface, we prepared the moth-eye anti-reflector by ultraviolet nanoimprint technology and achieved an average reflectance as low as 5.15%. By attaching the anti-reflector on the glass side of PSCs, the JSC was promoted by 9.4% from 10.89 mA/cm2 to 11.91 mA/cm2, which is the highest among PSCs with a structure of glass/FTO/c-TiO2/CsPbIBr2/Carbon, and the PCE was enhanced by 9.9% from 9.17% to 10.08%. The results demonstrated that the larger JSC induced by the optical reflectance modulation of moth-eye anti-reflector was responsible for the improved PCE. Simultaneously, this moth-eye anti-reflector can withstand a high temperature up to 200 °C, and perform efficiently at a wide range of incident angles from 40° to 90° and under various light intensities. This work is helpful to further improve the performance of CsPbIBr2 PSCs by optical modulation and boost the possible application of wide-range-wavelength anti-reflector in single and multi-junction solar cells.

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“…To access to certain applications, MOF printing techniques should likely decrease their resolution to about 10 nm, as achieved with silicon oxide 67. 3) Some of the top-down techniques are carried out on MOF coatings with poor intergrowth what can imply, for instance, potential leaks in the generated devices, thus single crystal or like (i.e.…”

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confidence: 99%