2011
DOI: 10.1063/1.3658249
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Nanoparticles in SiH4-Ar plasma: Modelling and comparison with experimental data

Abstract: Experimental and theoretical investigations for growth of silicon nanoparticles (4 to 14 nm) in radio frequency discharge were carried out. Growth processes were performed with gas mixtures of SiH4 and Ar in a plasma chemical reactor at low pressure. A distinctive feature of presented kinetic model of generation and growth of nanoparticles (compared to our earlier model) is its ability to investigate small “critical” dimensions of clusters, determining the rate of particle production and taking into account th… Show more

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Cited by 7 publications
(4 citation statements)
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“…Such nanosynthesis is selective because the system does not proceed beyond the breakdown phase and, therefore, the coagulation in bigger clusters is hindered. In a different application concerning controlled production of particles [37,38], pulsed arc signals could be tailored to grow carbon nanostructures with a determined size distribution. Thus, pulsed anodic arc discharge technique is promising for the synthesis of monodisperse ensembles of nanoparticles with accurate control of the particle size.…”
Section: Pulsed Versus DC Anodic Arc Dischargesmentioning
confidence: 99%
“…Such nanosynthesis is selective because the system does not proceed beyond the breakdown phase and, therefore, the coagulation in bigger clusters is hindered. In a different application concerning controlled production of particles [37,38], pulsed arc signals could be tailored to grow carbon nanostructures with a determined size distribution. Thus, pulsed anodic arc discharge technique is promising for the synthesis of monodisperse ensembles of nanoparticles with accurate control of the particle size.…”
Section: Pulsed Versus DC Anodic Arc Dischargesmentioning
confidence: 99%
“…Thinner carbon deposition on cathode was observed probably due to the neutral nanoparticles and negative radicals of carbon. Moreover, the cathode suffers a significant ion bombardment (e.g., CH 3 + [54]). In addition, according to the given growth mechanism of CEINPs, the nitrogen plasma has higher temperature compared to helium plasma, which results in higher availability of carbon species.…”
Section: Resultsmentioning
confidence: 99%
“…For example, some studies have attempted to establish the conditions that enable rapid deposition of an amorphous silicon layer [24][25][26]. In addition, various studies have concentrated on the generation of silicon nanoparticles [27][28][29][30]. However, it was difficult to find numerical research involving an in-depth analysis of the spatial distribution of the plasma parameters in SiH 4 /Ar CCPs.…”
Section: Introductionmentioning
confidence: 99%